US5173393A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etch-resistant deep ultraviolet resist process having an aromatic treating step after development
Assignee: Qimonda AG
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Filing: 1990-04-24
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Granted: 1992-12-22
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Expires: 2010-04-24
Abstract
Abstract A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.
Inventors
- 👤 Recai Sezi
- 👤 Michael Sebald
- 👤 Rainer Leuschner
- 👤 Siegfried Birkle
- 👤 Hellmut Ahne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:47
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A method for dimensionally accurate, photolithographic structure production, comprising the following steps: a) applying onto a substrate a layer of an easily structurable photoresist, having a base polymer that is adequately transparent for the exposure radiation and a photoactive constituent, o-quinone diazide, the photoresist comprising groups that are reactive after development; b) exposing in the deep ultraviolet range and developing in an aqueous alkaline solution the resist layer for generating a resist structure; c) treating the resist structure with a reactant that has aromatic structures and comprises reactive groups for creating a chemical compound with the reactable groups of the generated resist structures; and d) etching the substrate in a halogen-containing plasma using the treated resist structure as an etching mask.
Claim 2
Independent Claim
121 words
A method for dimensionally accurate, photolithographic structure production, comprising the following steps: a) applying onto a substrate a layer of an easily structurable photoresist, having a base polymer that is adequately transparent for the exposure radiation and a photoactive constituent, o-quinone diazide, the photoresist comprising groups that are reactive after development; b) exposing in the deep ultraviolet range and developing in an aqueous alkaline solution the resist layer for generating a resist structure; c) treating the resist structure with a reactant that has aromatic structures and comprises reactive groups for creating a chemical compound with the reactable groups of the generated resist structures; and d) etching the substrate in a halogen-containing plasma using the treated resist structure as an etching mask.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the reactant is present in an aqueous solution.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein the reactant is present in an emulsion.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein the reactant is present in a composition that includes water.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the treatment of the resist structure with the reactant is implemented in a spray, puddle or immersion developer.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein the treatment is implemented at room temperature.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the treatment is implemented at ambient pressure.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein after step c, the resist structure is rinsed.
Claim 10
Dependent Claim
13 words
The method of claim 8 wherein the resist structure is dried after rinsing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-22 | 1996-06-22 | 1996-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-22 | 2000-06-22 | 2000-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-22 | 2004-06-22 | 2004-12-22 | $7700.00 | Window Closed / Lapsed |