Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
205 words
A method of manufacturing a semiconductor device, the method comprising the steps of forming a positive-working resist film on a semiconductor substrate, lithographically processing the resist film so as to produce a desired resist pattern, reacting the material of the resist pattern with a mono- or poly-functional organic compound, with an organic siloxane containing SiH groups or other functional groups which react the resist pattern material, or with a metallo-organic compound so as to increase the resistance of the resist pattern material to dry etching, and dry etching the areas of the substrate which are exposed through the apertures in the treated resist pattern, wherein the resist film is formed from a polymer mad by polymerising a monomer of the structure Wherein R 1 is an alkyl group, Cl, Br, CN, H or H 2 , R 2 is -COC1, -CCBr, COOH or CONH 2 , and wherein R 1 does not react with R 2 , and wherein the functional group (s) of the mono- or poly-functional organic compound, organic siloxane, or metallo-organic compound react(s) with the group R 2 of the resist pattern material so as to introduce an aromatic group or other dry-etch resistant group or atom into the resist pattern material.
Claim 2
Independent Claim
205 words
A method of manufacturing a semiconductor device, the method comprising the steps of forming a positive-working resist film on a semiconductor substrate, lithographically processing the resist film so as to produce a desired resist pattern, reacting the material of the resist pattern with a mono- or poly-functional organic compound, with an organic siloxane containing SiH groups or other functional groups which react the resist pattern material, or with a metallo-organic compound so as to increase the resistance of the resist pattern material to dry etching, and dry etching the areas of the substrate which are exposed through the apertures in the treated resist pattern, wherein the resist film is formed from a polymer mad by polymerising a monomer of the structure Wherein R 1 is an alkyl group, Cl, Br, CN, H or H 2 , R 2 is -COC1, -CCBr, COOH or CONH 2 , and wherein R 1 does not react with R 2 , and wherein the functional group (s) of the mono- or poly-functional organic compound, organic siloxane, or metallo-organic compound react(s) with the group R 2 of the resist pattern material so as to introduce an aromatic group or other dry-etch resistant group or atom into the resist pattern material.
Claim 3
Dependent Claim
56 words
A method as claimed in Claim 1, wherein the mono- or poly-functional organic compound has a composition defined by one of the following formulæ or a derivative of such a formula containing a substituent at another position in the ring, wherein R 3 is NH 2 , OH, CH 2 NH 2 or CH 2 OH.
Claim 4
Dependent Claim
18 words
A method as claimed in Claim 1, wherein R 1 is CH 3 and R 2 is COOl.
Claim 5
Dependent Claim
15 words
A method as claimed in Claim 3, wherein the resist pattern is reacted with aniline.
Claim 6
Dependent Claim
39 words
A method as claimed in Claim 1, wherein the resist pattern is reacted with the mono-or poly-functional organic compound, organic siloxane or metallo-organic compound by inversion in a solution of the said organic compound, organic siloxane, or metallo-organic compound.
Claim 7
Independent Claim
59 words
A method as claimed in any of Claims 1 to 5, wherein the resist film is formed on a chromium film on a transparent plate, and areas of the chrominium film which are exposed through apertures in the resist pattern are dry etched so as to form a mask which is used in the manufacture of the semiconductor device.
Claim 8
Independent Claim
18 words
A method as claimed in any of Claims 1 to 5, wherein the substrate is a semiconductor substrate.