US4865945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Positive photoresist material with o-quinone diazide and polymer containing silicon atoms
Assignee: Sony Corp
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Filing: 1987-08-10
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Granted: 1989-09-12
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Expires: 2007-08-10
Abstract
Abstract The present application describes a photoresist material which contains organo-silicon groups and the photoresist material is suitable for forming a micropattern applied in the fabrication of semiconductor integrated circuit and magnetic bubble memory elements. The photoresist material possesses high resistance to plasma etching using oxygen gas.
Inventors
- 👤 Tsutomu Noguchi
- 👤 Keiichi Nito
- 👤 Junetsu Seto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:53
CPC Classifications
G; G03; G03C; G03C1/00; G03C1/72; C; C08; C08G; C08G77/00; C08G77/48; C08G77/50; C08G77/52; C08G8/00; C08G8/04; C08G8/08; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
194 words
A positive photoresist comprising an admixture of a photo-sensitive O-quinone diazide and a polymer having at least one recurring unit represented by the following general formula: ##STR8## wherein R 1 and R 9 are each lower alkalene groups; R 2 and R 3 , R 4 , R 10 , R 11 , and R 12 each are H, OH, CH 3 , or CH 2 OH; R 5 to R 8 are each lower alkyl groups; R 13 is CH 2 or CH 2 OCH 2 ; p is 0 or 1; A is phenol or a substituted phenol having substituents in the o-, m-, or p-, positions relative to the hydroxyl or A is: ##STR9## wherein R 14 is a lower alkalene group, R 15 , R 16 and R 12 are each lower alkyl groups, X is greater than 0.3 but less than 1.0, and Y is not more than 0.7; and wherein the O-quinone diazide and polymer are present in sufficient quantity amounts in the photoresist material when used in a coating on substrate that upon a pattern exposure to ultra-violet radiation and subsequent development a resist pattern is formed.
Claim 2
Dependent Claim
194 words
A positive photoresist comprising an admixture of a photo-sensitive O-quinone diazide and a polymer having at least one recurring unit represented by the following general formula: ##STR8## wherein R 1 and R 9 are each lower alkalene groups; R 2 and R 3 , R 4 , R 10 , R 11 , and R 12 each are H, OH, CH 3 , or CH 2 OH; R 5 to R 8 are each lower alkyl groups; R 13 is CH 2 or CH 2 OCH 2 ; p is 0 or 1; A is phenol or a substituted phenol having substituents in the o-, m-, or p-, positions relative to the hydroxyl or A is: ##STR9## wherein R 14 is a lower alkalene group, R 15 , R 16 and R 12 are each lower alkyl groups, X is greater than 0.3 but less than 1.0, and Y is not more than 0.7; and wherein the O-quinone diazide and polymer are present in sufficient quantity amounts in the photoresist material when used in a coating on substrate that upon a pattern exposure to ultra-violet radiation and subsequent development a resist pattern is formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |