US5170228A
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Opto-electronic integrated circuit
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-03-19
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Granted: 1992-12-08
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Expires: 2010-03-19
Abstract
Abstract Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate, the field effect transistor comprising a high electron mobility transistor having: a GaInAs layer epitaxially grown in the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and the photo-diode comprising a PIN photo-diode having: the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.
Inventors
- 👤 Goro Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:37
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
206 words
An opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate, the field effect transistor comprising a high electron mobility transistor the photo-diode comprising a PIN photo-diode, the high electron mobility transistor comprising; a GaInAs layer epitaxially grown on the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and the PIN photo-diode comprising; the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.
Claim 2
Dependent Claim
206 words
An opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate, the field effect transistor comprising a high electron mobility transistor the photo-diode comprising a PIN photo-diode, the high electron mobility transistor comprising; a GaInAs layer epitaxially grown on the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and the PIN photo-diode comprising; the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.
Claim 3
Dependent Claim
21 words
An opto-electronic integrated circuit according to claim 1, wherein the photo-diode has a p-InP layer in place of the p-GaInAs layer.
Claim 4
Dependent Claim
208 words
An opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an inP substrate, the field effect transistor comprising a high electron mobility transistor, the photo-diode comprising a PIN photo-diode, the high electron mobility transistor comprising: a GaInAs layer epitaxially grown on an InP substrate in a preset region thereof; a n-AlInAs layer located above the GaInAs layer and epitaxially grown; a gate electrode formed on the n-AlInAs layer; an InP layer formed on the n-AlInAs layer; and a source electrode and a drain electrode formed on the InP layer with the gate electrode therebetween, and the PIN photo-diode comprising; the GaInAs layer epitaxially grown near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, an n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer, and a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer under the undoped GaInAs layer.
Claim 5
Dependent Claim
208 words
An opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an inP substrate, the field effect transistor comprising a high electron mobility transistor, the photo-diode comprising a PIN photo-diode, the high electron mobility transistor comprising: a GaInAs layer epitaxially grown on an InP substrate in a preset region thereof; a n-AlInAs layer located above the GaInAs layer and epitaxially grown; a gate electrode formed on the n-AlInAs layer; an InP layer formed on the n-AlInAs layer; and a source electrode and a drain electrode formed on the InP layer with the gate electrode therebetween, and the PIN photo-diode comprising; the GaInAs layer epitaxially grown near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, an n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer, and a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer under the undoped GaInAs layer.
Claim 6
Dependent Claim
21 words
An opto-electronic integrated circuit according to claim 3, wherein the photo-diode has a p-InP layer in place of the p-GaInAs layer.
Claim 7
Dependent Claim
27 words
An opto-electronic integrated circuit according to claim 4, wherein the photodiode and the field effect transistor have respective n-GaInAs layers in place of the respective n-InP layers.
Claim 8
Dependent Claim
27 words
An opto-electronic integrated circuit according to claim 3, wherein the photodiode and the field effect transistor have respective n-GaInAs layers in place of the respective n-InP layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |