US5166084A
Expired / Lapsed
US
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Process for fabricating a silicon on insulator field effect transistor
Assignee: NXP USA Inc
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Filing: 1991-09-03
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Granted: 1992-11-24
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Expires: 2011-09-03
Abstract
Abstract A process for fabricating an isolated silicon on insulator (SOI) field effect transistor (FET) (10, 11, 13, 15). The SOI FET is made on a substrate material (12). In one form, a first control electrode referred to as gate (24), is contained within the substrate (12) underlying a dielectric layer (14). A second control electrode referred to as gate (26) overlies a dielectric layer (28). A source and a drain current electrode are formed from a germanium-silicon layer (18). A silicon layer (16) forms an isolated channel region of the SOI FET. The gates (12, 24) are separated from the channel by gate dielectric layers (14, 28). The germanium-silicon layer (18) is much thicker than the silicon layer (16) which is made thin to provide a thin channel region. An optional nitride layer 20 overlies the germanium-silicon layer (18).
Inventors
- 👤 James R. Pfiester
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/674; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
107 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the substrate; forming a silicon layer of a first conductivity type overlying the first dielectric layer; forming a germanium-silicon layer of a second conductivity type overlying the silicon layer; and selectively etching a portion of the germanium-silicon layer relative to the silicon layer to form an opening, having a wall surface, and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the current electrodes.
Claim 2
Dependent Claim
107 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the substrate; forming a silicon layer of a first conductivity type overlying the first dielectric layer; forming a germanium-silicon layer of a second conductivity type overlying the silicon layer; and selectively etching a portion of the germanium-silicon layer relative to the silicon layer to form an opening, having a wall surface, and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the current electrodes.
Claim 3
Dependent Claim
30 words
The process of claim 1 further comprising the steps of forming a gate electrode of a predetermined conductivity in the substrate and aligned with the opening in the germanium-silicon layer.
Claim 4
Dependent Claim
41 words
The process of claim 2 further comprising the steps of: forming a second dielectric layer on the exposed portion of the silicon layer and the wall surface of the germanium-silicon layer; and forming a gate electrode overlying the second dielectric layer.
Claim 5
Dependent Claim
64 words
The process of claim 3 further comprising the step of forming a gate electrode wherein the gate electrode comprises a conductive region that completely fills the opening in the germanium-silicon layer and is bounded in the opening by the second dielectric region, and the gate electrode overlies partially the source and drain electrodes which are separated from the gate electrode by a dielectric layer.
Claim 6
Dependent Claim
41 words
The process of claim 1 further comprising the steps of: forming a second dielectric layer on the exposed portion of the silicon layer and the wall surface of the germanium-silicon layer; and forming a gate electrode overlying the second dielectric layer.
Claim 7
Dependent Claim
34 words
The process of claim 1 wherein the step of selectively etching a portion of the germanium-silicon layer comprises chemical etching with a solution containing HF, H2O2 and CH3COOH mixed in quantities of (1:2:3) respectively.
Claim 8
Dependent Claim
42 words
The process of claim 1 further comprising the steps of: forming of a nitride layer overlying the germanium silicon layer; forming a photoresist pattern on the nitride layer; and selectively etching the nitride layer using the photoresist pattern as an etch mask.
Claim 9
Dependent Claim
46 words
The process of claim 1 further comprising the step of forming a gate electrode wherein the gate electrode comprises a channel region extending from the first delectric layer into the substrate and is laterally coextensive with the wall surface of the opening in the germanium-silicon layer.
Claim 10
Dependent Claim
138 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the substrate; forming a silicon layer of a first conductivity type overlying the first dielectric layer; forming a germanium-silicon layer of a second conductivity type overlying the silicon layer; forming a nitride layer overlying the germanium-silicon layer; selectively etching a portion of the germanium-silicon layer relative to the silicon layer to form an opening having a wall surface and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the source and draim electrodes; and forming a gate electrode in the substrate underlying the first dielectric layer and aligned to the opening in the germanium-silicon layer.
Claim 11
Dependent Claim
138 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the substrate; forming a silicon layer of a first conductivity type overlying the first dielectric layer; forming a germanium-silicon layer of a second conductivity type overlying the silicon layer; forming a nitride layer overlying the germanium-silicon layer; selectively etching a portion of the germanium-silicon layer relative to the silicon layer to form an opening having a wall surface and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the source and draim electrodes; and forming a gate electrode in the substrate underlying the first dielectric layer and aligned to the opening in the germanium-silicon layer.
Claim 12
Dependent Claim
182 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a silicon substrate; growing a first silicon dioxide layer overlying the substrate; depositing a silicon layer of a first conductivity type overlying the first silicon dioxide layer; depositing a germanium-silicon layer of a second conductivity type overlying the silicon layer; depositing a nitride layer overlying the germanium-silicon layer; spinning a photoresist layer overlying the nitride layer forming a resist mask; selectively etching a portion of the germanium-silicon layer relative to the silicon layer with a solution containing HF, H202 and CH3C00H mixed in quantities of (1:2:3) respectively, and using the photoresist layer as an etch mask to form an opening having a wall surface and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the source and drain electrodes; and implanting dopant charge into the substrate to form a gate electrode underlying the first dielectric layer and aligned within the substrate by the opening in the germanium-silicon layer.
Claim 13
Dependent Claim
182 words
A process for fabricating a silicon on insulator FET comprising the steps of: providing a silicon substrate; growing a first silicon dioxide layer overlying the substrate; depositing a silicon layer of a first conductivity type overlying the first silicon dioxide layer; depositing a germanium-silicon layer of a second conductivity type overlying the silicon layer; depositing a nitride layer overlying the germanium-silicon layer; spinning a photoresist layer overlying the nitride layer forming a resist mask; selectively etching a portion of the germanium-silicon layer relative to the silicon layer with a solution containing HF, H202 and CH3C00H mixed in quantities of (1:2:3) respectively, and using the photoresist layer as an etch mask to form an opening having a wall surface and exposing a portion of the silicon layer, wherein the exposed portion of the silicon layer forms a transistor channel region and the unetched portion of the germanium-silicon layer forms the source and drain electrodes; and implanting dopant charge into the substrate to form a gate electrode underlying the first dielectric layer and aligned within the substrate by the opening in the germanium-silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |