Patent US5164802A successfully refreshed from Google Patents.
US5164802A
Expired / Lapsed
US
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Power vdmosfet with schottky on lightly doped drain of lateral driver fet
Assignee: Fairchild Semiconductor Corp
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Filing: 1991-03-20
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Granted: 1992-11-17
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Expires: 2011-03-20
Abstract
Abstract A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
Inventors
- 👤 Frederick P. Jones
- 👤 Joseph A. Yedinak
- 👤 John M. S. Neilson
- 👤 Robert S. Wrathall
- 👤 Jeffrey G. Mansmann
- 👤 Claire E. Jackoski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:13
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D84/146
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
210 words
A monolithic semiconductor device comprising: a substrate of a first conductivity type material, an upper region of said substrate having a lower impurity doping concentration than a lower portion thereof; a first region of a second conductivity type material formed in said upper region of said substrate; a second region of said first conductivity type material formed in said first region of said second conductivity type so as to leave an annular ring of said second conductivity material around said second region; a third region of said second conductivity type material formed in said upper region of said substrate; a fourth region of said first conductivity type material having a lower doping concentration than said second region, formed in said third region of said second conductivity type; a fifth region of said first conductivity type material formed in said third region of said second conductivity type so as to leave an annular ring of second conductivity type material around said fourth region; a layer of gate oxide overlying at least a portion of each of said annular rings; metallic conductor means contacting at least a portion of said fourth region for forming a Schottky barrier diode therewith; and a gate electrode overlying at least a portion of said gate oxide.
Claim 2
Dependent Claim
210 words
A monolithic semiconductor device comprising: a substrate of a first conductivity type material, an upper region of said substrate having a lower impurity doping concentration than a lower portion thereof; a first region of a second conductivity type material formed in said upper region of said substrate; a second region of said first conductivity type material formed in said first region of said second conductivity type so as to leave an annular ring of said second conductivity material around said second region; a third region of said second conductivity type material formed in said upper region of said substrate; a fourth region of said first conductivity type material having a lower doping concentration than said second region, formed in said third region of said second conductivity type; a fifth region of said first conductivity type material formed in said third region of said second conductivity type so as to leave an annular ring of second conductivity type material around said fourth region; a layer of gate oxide overlying at least a portion of each of said annular rings; metallic conductor means contacting at least a portion of said fourth region for forming a Schottky barrier diode therewith; and a gate electrode overlying at least a portion of said gate oxide.
Claim 3
Dependent Claim
18 words
A monolithic semiconductor device in accordance with claim 1, wherein said metallic conductor means contacts said gate electrode.
References Cited (Backward Citations)
US4394590A
Cited
US4521795A
Cited
US4590395A
Cited
US4631564A
Cited
US4672245A
Cited
US4801983A
Cited
US4823172A
Cited
US4811065A
Cited
US4893158A
Cited
US4967109A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |