US4801983A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky diode formed on MOSFET drain
Assignee: Hitachi Ltd
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Filing: 1986-08-22
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Granted: 1989-01-31
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Expires: 2006-08-22
Abstract
Abstract A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier diode is connected to one of the source and drain terminals of a field effect transistor to form the series combination of the Schottky-barrier diode and the field effect transistor, that one of end terminals of the series combination which exists on the anode side of the diode, is used as an input terminal, the other end terminal existing on the cathode side is used as an output terminal, the gate electrode of the field effect transistor is used as a switching control electrode, and a current flowing through the switching circuit in a direction from the input terminal to the output terminal is controlled in accordance with a signal applied to the switching control electrode.
Inventors
- 👤 Masahiro Ueno
- 👤 Masahiro Iwamura
- 👤 Kozaburo Kurita
- 👤 Ikuro Masuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:59
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H10; H10D; H10D84/00; H10D84/80; H10D84/811
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
218 words
A semiconductor device having a first electrode, a second electrode, a unidirectional switching circuit connected between said first and second electrodes and a control electrode for controlling said unidirectional switching circuit, said unidirectional switching circuit comprising: a field effect transistor including a first semiconductor region of a first conductivity type, second and third regions of a second conductivity type which are formed at a first surface of said first semiconductor region and spaced from each other, said second region being in ohmic contact with said first electrode, said third region being made in a two-layer form of a low-impurity concentration layer exposed to said first surface of said first semiconductor region and a buried layer buried into said first semiconductor region and having a higher concentration of impurities than that of said low-impurity concentration layer, and a gate electrode facing an area of said first surface of said first semiconductor region disposed between said second and third regions having an insulating layer formed between said area and said gate electrode, said gate electrode being connected to said control electrode; and a Schottky-barrier diode including said low-impurity concentration layer and said second electrode which is formed of metallic material, said second electrode being in contact with said low-impurity concentration layer so as to provide a Schottky barrier effect therebetween.
Claim 2
Dependent Claim
218 words
A semiconductor device having a first electrode, a second electrode, a unidirectional switching circuit connected between said first and second electrodes and a control electrode for controlling said unidirectional switching circuit, said unidirectional switching circuit comprising: a field effect transistor including a first semiconductor region of a first conductivity type, second and third regions of a second conductivity type which are formed at a first surface of said first semiconductor region and spaced from each other, said second region being in ohmic contact with said first electrode, said third region being made in a two-layer form of a low-impurity concentration layer exposed to said first surface of said first semiconductor region and a buried layer buried into said first semiconductor region and having a higher concentration of impurities than that of said low-impurity concentration layer, and a gate electrode facing an area of said first surface of said first semiconductor region disposed between said second and third regions having an insulating layer formed between said area and said gate electrode, said gate electrode being connected to said control electrode; and a Schottky-barrier diode including said low-impurity concentration layer and said second electrode which is formed of metallic material, said second electrode being in contact with said low-impurity concentration layer so as to provide a Schottky barrier effect therebetween.
Claim 3
Dependent Claim
260 words
A semiconductor matrix circuit having a plurality of row lines, a plurality of column lines, unidirectional switching circuits formed at selected ones of respective intersections of said row lines and said column lines, and a plurality of input lines formed correspondingly to said row lines, each unidirectional switching circuit comprising: a field effect transistor including a first semiconductor region of a first conductivity type, second and third regions of a second conductivity type which are formed at a first surface of said first semiconductor region and spaced from each other, said second region being in ohmic contact with a row line passing through an associated intersection, said third region being made in a two-layer form of a low-impurity concentration layer exposed to said first surface of said first semiconductor region and a buried layer buried into said first semiconductor region and having a higher concentration of impurities than that of said low-impurity concentration layer, and a gate electrode facing an area of said first surface of said first semiconductor region disposed between said second and third regions having an insulating layer formed between said area and said gate electrode, said gate electrode being connected to an input line corresponding to said row line passing through said associated intersection, and a Schottky-barrier diode including said low-impurity concentration layer and said second electrode which is formed of metallic material said second electrode being in contact with said low-impurity concentration layer so as to provide a Schottky-barrier effect therebetween, said second electrode being connected to a column line passing through said associated intersection.
Claim 4
Dependent Claim
260 words
A semiconductor matrix circuit having a plurality of row lines, a plurality of column lines, unidirectional switching circuits formed at selected ones of respective intersections of said row lines and said column lines, and a plurality of input lines formed correspondingly to said row lines, each unidirectional switching circuit comprising: a field effect transistor including a first semiconductor region of a first conductivity type, second and third regions of a second conductivity type which are formed at a first surface of said first semiconductor region and spaced from each other, said second region being in ohmic contact with a row line passing through an associated intersection, said third region being made in a two-layer form of a low-impurity concentration layer exposed to said first surface of said first semiconductor region and a buried layer buried into said first semiconductor region and having a higher concentration of impurities than that of said low-impurity concentration layer, and a gate electrode facing an area of said first surface of said first semiconductor region disposed between said second and third regions having an insulating layer formed between said area and said gate electrode, said gate electrode being connected to an input line corresponding to said row line passing through said associated intersection, and a Schottky-barrier diode including said low-impurity concentration layer and said second electrode which is formed of metallic material said second electrode being in contact with said low-impurity concentration layer so as to provide a Schottky-barrier effect therebetween, said second electrode being connected to a column line passing through said associated intersection.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-31 | 1992-08-01 | 1993-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-31 | 1996-08-01 | 1997-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-31 | 2000-08-01 | 2001-01-31 | $7700.00 | Window Closed / Lapsed |