Static semiconductor memory cell

Abstract

Abstract PURPOSE:To accelerate the access of a static semiconductor memory by making a metal contact with one portion of a channel region of a driving or loading transistor to form a Schottky barrier diode. CONSTITUTION:When a ground line GL is set at substantially equal potential to or higher than the potential of bit lines BL, BL', the Schottky barrier diodes D11, D12 become off state. If the potential of the line GL is grounded when the memory is accessed, a driving transistor Q11 of on state of a flip-flop FF becomes further on state, and the drain voltage thereof may become low potential near the ground potential. Since the drain of the off-side transistor Q12 approaches the power potential, a current will flow through the diode D11 connected to the transistor Q11 to be detected as the potential change of the line BL. In writing, the potential of the lines BL, BL' is forcibly set at H, L levels, the state of the FF is determined by the level.

Inventors

• 👤 Masao Taguchi
• 👤 Koichi Nishiuchi

Bibliographic Details