US3788904A
Expired / Lapsed
US
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Method of producing an integrated solid state circuit
Assignee: Telefunken Electronic GmbH
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Filing: 1971-02-18
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Granted: 1974-01-29
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Expires: 1991-02-18
Abstract
Abstract A METHOD OF PRODUCING AN INTEGRATED SOLID STATE CIRCUIT CONTAINING A MOS FIELD EFFECT TRANSISTOR AND A DIODE INCLUDING INTRODUCING INTO A SEMICONDUCTOR BODY OF A FIRST TYPE OF CONDUCTIVITY, INTRODUCING SOURCE AND DRAIN REGIONS OF THE CONDUCTIVITY, INTRODUCING SOURCE AND DRAIN REGIONS OF THE SECOND TYPE OF CONDUCTIVITY INTO THE SEMICONDUCTOR BODY WITH AT LEAST ONE OF THE SOURCE OR DRAIN REGIONS PROJECTING INTO THE DIODE REGION AND FINALLY COMPLETING THE DIODE.
Inventors
- 👤 T Haraszti
- 👤 R Grosholz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:33
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-28 | 1977-07-30 | 1978-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-28 | 1981-07-30 | 1982-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-28 | 1985-07-30 | 1986-01-29 | $7700.00 | Window Closed / Lapsed |