US4823172A
Expired / Lapsed
US
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Vertical MOSFET having Schottky diode for latch-up prevention
Assignee: Nissan Motor Co Ltd
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Filing: 1987-06-10
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Granted: 1989-04-18
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Expires: 2007-06-10
Abstract
Abstract In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p + or n + substrate, a p type channel region, and an n + source region, there is further provided a Schottky diode which is formed between the n epitaxial layer and a metal source electrode extending through the source region and channel region and reaching the epitaxial layer under the source and channel regions in order to prevent latch-up of a parasitic thyristor.
Inventors
- 👤 Teruyoshi Mihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:38
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441; H10D12/461; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/252; H10D64/2527; H10D64/256; H10D84/00; H10D84/101; H10D84/141; H10D84/146
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
160 words
A vertical MOS filed effect semiconductor device comprising: a substrate comprising a first semiconductor layer of a first conductivity type, said substrate having a first surface formed by said first semiconductor layer, and a second surface, a drain electrode formed on said second surface of said substrate, a channel region of a second conductivity type opposite to said first conductivity type, formed in said first semiconductor layer, a source region of said first conductivity type, surrounded by said semiconductor channel region, a gate electrode formed above said channel region between said source region and said first semiconductor layer, and separated from said channel region by a gate insulating layer, and a metal source electrode having a first portion extending into said substrate from said first surface, passing through said source region and said channel region and terminating at an innermost end which forms a first Schottky junction with said first semiconductor layer at a location remote from said first surface.
Claim 2
Dependent Claim
160 words
A vertical MOS filed effect semiconductor device comprising: a substrate comprising a first semiconductor layer of a first conductivity type, said substrate having a first surface formed by said first semiconductor layer, and a second surface, a drain electrode formed on said second surface of said substrate, a channel region of a second conductivity type opposite to said first conductivity type, formed in said first semiconductor layer, a source region of said first conductivity type, surrounded by said semiconductor channel region, a gate electrode formed above said channel region between said source region and said first semiconductor layer, and separated from said channel region by a gate insulating layer, and a metal source electrode having a first portion extending into said substrate from said first surface, passing through said source region and said channel region and terminating at an innermost end which forms a first Schottky junction with said first semiconductor layer at a location remote from said first surface.
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1 wherein said first portion of said source electrode is formed in a depression bored through said source region and said channel region.
Claim 4
Dependent Claim
46 words
A semiconductor device according to claim 2 wherein said device further comprises a highly doped semiconductor base region of said second conductivity type, formed under said source region and surrounded by said channel region, said first portion of said source electrode extending through said base region.
Claim 5
Dependent Claim
27 words
A semiconductor device according to claim 3 wherein said first portion of said source electrode is in ohmic contact with said source region and said base region.
Claim 6
Dependent Claim
23 words
A semiconductor device according to claim 4 wherein said substrate further comprises a second semiconductor layer having said second surface of said substrate.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 5 wherein said first conductivity type is an n type, and said second conductivity type is a p type.
Claim 8
Dependent Claim
19 words
A semiconductor device according to claim 6 wherein said second semiconductor layer of said substrate is said p type.
Claim 9
Dependent Claim
19 words
A semiconductor device according to claim 6 wherein said second semiconductor layer of said substrate is said n type.
Claim 10
Dependent Claim
41 words
A semiconductor device according to claim 5 wherein said metal source electrode has a second portion which is formed on said first surface of said substrate and which forms a second Schottky junction with said first semiconductor layer of said substrate.
Claim 11
Dependent Claim
24 words
A semiconductor device according to claim 6 wherein said base region is deeper than said first Schottky junction, and surrounds said first Schottky junction.
Claim 12
Dependent Claim
27 words
A semiconductor device according to claim 2 wherein said first portion of said source electrode is in ohmic contact with said source region and said channel region.
Claim 13
Dependent Claim
52 words
A semiconductor device according to claim 11 wherein said channel region comprises a highly doped semiconductor base region of said second conductivity type, formed under said source region, and a lightly doped peripheral region surrounding said source and base regions, said first portion of said source electrode extending through said base region.
Claim 14
Dependent Claim
23 words
A semiconductor device according to claim 12 wherein said first portion of said source electrode is in ohmic contact with said base region.
Claim 15
Dependent Claim
31 words
A semiconductor device according to claim 5 wherein said first semiconductor layer is formed on said second semiconductor layer, and has an impurity concentration lower than that of said second layer.
Claim 16
Dependent Claim
22 words
A semiconductor device according to claim 14, wherein said first semiconductor layer is an epitaxial layer grown on said second semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |