Patent US5164340A successfully refreshed from Google Patents.
US5164340A
Expired / Lapsed
US
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Structure and method for contacts in cmos devices
Assignee: STMicroelectronics lnc USA
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Filing: 1991-06-24
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Granted: 1992-11-17
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Expires: 2011-06-24
Abstract
Abstract The method for fabrication of openings in semiconductor devices to improve metal step coverage includes forming an active region over a substrate. A metal oxide layer is then formed over the source/drain region. An insulating layer is formed over the metal oxide layer. A photoresist layer is formed over the insulating layer, and patterned to form an opening, exposing a portion of the insulating. The insulating layer is then etched to expose a portion of the metal oxide layer. The photoresist layer is removed and the insulating layer is reflowed so as to form rounded corners at the opening of the insulating layer. The exposed portion of the metal oxide layer is removed to expose a portion of the active region.
Inventors
- 👤 Fusen Chen
- 👤 Frank R. Bryant
- 👤 Girish Dixit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
82 words
A method of forming an opening in an integrated circuit comprising the steps of: forming a metal oxide layer over a conductive region; forming an insulating layer over the metal oxide layer; forming an opening through the insulating layer exposing a portion of the metal oxide layer; reflowing the insulating layer so as to form rounded corners at the opening of the insulating layer; and, removing, after reflowing the insulating layer, the portion of the metal oxide layer exposed in the opening.
Claim 2
Independent Claim
82 words
A method of forming an opening in an integrated circuit comprising the steps of: forming a metal oxide layer over a conductive region; forming an insulating layer over the metal oxide layer; forming an opening through the insulating layer exposing a portion of the metal oxide layer; reflowing the insulating layer so as to form rounded corners at the opening of the insulating layer; and, removing, after reflowing the insulating layer, the portion of the metal oxide layer exposed in the opening.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein the conductive region is an active region of a transistor.
Claim 4
Dependent Claim
15 words
The method claim 2, wherein the active region is a source/drain region of the transistor.
Claim 5
Dependent Claim
24 words
The method of claim 1, wherein the insulating layer is a glass layer deposited so as to conform to the shape of underlying surfaces.
Claim 6
Dependent Claim
13 words
The method of claim 4, wherein the glass layer is PSG or BPSG.
Claim 7
Dependent Claim
28 words
The method of claim 1, wherein the forming an opening through the insulating layer step comprises anisotropically etching the insulating exposing a portion of the metal oxide layer.
Claim 8
Dependent Claim
26 words
The method of claim 6, further comprising the step of isotropically etching the insulating layer partway through the insulating layer before anisotropically etching the insulating layer.
Claim 9
Dependent Claim
22 words
The method of claim 6, wherein the metal oxide layer acts as an etch stop during the etching the insulating layer step.
Claim 10
Dependent Claim
15 words
The method of claim 1, wherein the metal oxide layer is a refractory metal oxide.
Claim 11
Dependent Claim
14 words
The method of claim 1, wherein the metal oxide layer is an aluminum oxide.
Claim 12
Dependent Claim
36 words
The method of claim 1, wherein the metal oxide layer is deposited to a sufficient thickness to prevent dopant diffusion from the insulating layer to the underlying conductive element during the reflowing the insulating layer step.
Claim 13
Dependent Claim
25 words
The method of claim 1, wherein the metal oxide layer is selectively etched so as not to remove a substantial portion of the insulating layer.
Claim 14
Independent Claim
120 words
A method of forming an opening in an integrated circuit comprising the steps of: forming an active region in a substrate; forming a metal oxide layer over the active region; forming an insulating layer over the metal oxide layer; forming a photoresist layer over the insulating layer; forming an opening through the photoresist layer exposing a portion of the insulating layer; patterning and etching the exposed portion of the insulating layer to expose a portion of the metal oxide layer; removing the photoresist layer; reflowing the insulating layer so as to form rounded contact corners at the opening cf the insulating layer; and, selectively etching the exposed portion of the metal oxide layer exposing a portion of the active region.
Claim 15
Independent Claim
120 words
A method of forming an opening in an integrated circuit comprising the steps of: forming an active region in a substrate; forming a metal oxide layer over the active region; forming an insulating layer over the metal oxide layer; forming a photoresist layer over the insulating layer; forming an opening through the photoresist layer exposing a portion of the insulating layer; patterning and etching the exposed portion of the insulating layer to expose a portion of the metal oxide layer; removing the photoresist layer; reflowing the insulating layer so as to form rounded contact corners at the opening cf the insulating layer; and, selectively etching the exposed portion of the metal oxide layer exposing a portion of the active region.
Claim 16
Dependent Claim
16 words
The method of claim 13, wherein the active region is a source/drain region of a transistor.
Claim 17
Dependent Claim
29 words
The method of claim 13, wherein the etching the exposed portion of the insulating layer step comprises anisotropically etching the insulating exposing a portion of the metal oxide layer.
Claim 18
Dependent Claim
26 words
The method of claim 15, further comprising the step of isotropically etching the insulating layer partway through the insulating layer before anisotropically etching the insulating layer.
Claim 19
Dependent Claim
22 words
The method of claim 15, wherein the metal oxide layer acts as an etch stop during the etching the insulating layer step.
Claim 20
Dependent Claim
15 words
The method of claim 13, wherein the metal oxide layer is a refractory metal oxide.
Claim 21
Dependent Claim
14 words
The method of claim 13, wherein the metal oxide layer is an aluminum oxide.
Claim 22
Dependent Claim
36 words
The method of claim 13, wherein the metal oxide layer is deposited to a sufficient thickness to prevent dopant diffusion from the insulating layer to the underlying active region during the reflowing the insulating layer step.
Claim 23
Dependent Claim
25 words
The method of claim 13, wherein the metal oxide layer is selectively etched so as not to remove a substantial portion of the insulating layer.
References Cited (Backward Citations)
US3940288A
Cited
US4224089A
Cited
US4499653A
Cited
US4535528A
Cited
EP0232508A2
Cited
US4745089A
Cited
US4966870A
Cited
US5006484A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |