US5164339A
Expired / Lapsed
US
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Fabrication of oxynitride frontside microstructures
Assignee: Siemens Automotive LP
•
Filing: 1991-05-28
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Granted: 1992-11-17
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Expires: 2011-05-28
Abstract
Abstract Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500° C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.
Inventors
- 👤 George E. Gimpelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:02
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; Y; Y10; Y10S; Y10S148/00; Y10S148/159
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
83 words
A method for producing a low stress free-standing microstructure, said method comprising the steps of: providing a silicon substrate; forming a spacer layer on said silicon substrate; etching a pattern in said spacer layer to produce an etched spacer layer; forming a silicon oxynitride layer on said etched spacer layer; and etching said spacer layer to remove said spacer layer without removing portions of said oxynitride layer formed on said spacer layer to form said low stress free-standing oxynitride microstructure on said substrate.
Claim 2
Independent Claim
83 words
A method for producing a low stress free-standing microstructure, said method comprising the steps of: providing a silicon substrate; forming a spacer layer on said silicon substrate; etching a pattern in said spacer layer to produce an etched spacer layer; forming a silicon oxynitride layer on said etched spacer layer; and etching said spacer layer to remove said spacer layer without removing portions of said oxynitride layer formed on said spacer layer to form said low stress free-standing oxynitride microstructure on said substrate.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein said step of forming said oxynitride layer is carried out at a temperature of not more than 500° C.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein said temperature is in the range of 150° C. to 300° C.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein said microstructure is in the form of a bridge.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein said microstructure is in the form of a cantilever.
Claim 7
Dependent Claim
20 words
A method according to claim 1, wherein said microstructure has a stress of less than 5×10 8 dyne/cm 2 .
Claim 8
Dependent Claim
22 words
A method according to claim 6, wherein said stress is in the region of 5×10 6 to 1×10 8 dyne/cm 2 .
Claim 9
Dependent Claim
14 words
A method according to claim 1, wherein said spacer layer is formed of aluminum.
Claim 10
Dependent Claim
29 words
A method according to claim 1, wherein said oxynitride layer is formed by a plasma-enhanced chemical vapor deposition of oxynitride from a mixture comprising silane, nitrous oxide and nitrogen.
Claim 11
Dependent Claim
31 words
A method according to claim 9, wherein said silane, nitrous oxide and nitrogen are present in a volume ratio of 0.5 to 2 (silane):3 to 12 (nitrous oxide):5 to 20 (nitrogen).
Claim 12
Dependent Claim
20 words
A method according to claim 10, wherein said volume ratio of silane to nitrous oxide to nitrogen is about 1:6:10.
Claim 13
Dependent Claim
45 words
A method according to claim 9, wherein said chemical vapor deposition is carried out at a temperature of about 300° C. for a time period of about 25 minutes and at a power level of about 45 watts and a pressure of about 300 mtorr.
Claim 14
Dependent Claim
20 words
A method according to claim 9, wherein said oxynitride layer has a thickness of about 1000 to about 25000 Angstroms.
Claim 15
Independent Claim
107 words
A method for forming an integrated silicon sensor comprising a low stress free-standing oxynitride microstructure, said method comprising the steps of: providing a substrate having at least one integrated circuit on the major surface thereof; forming a spacer layer on said substrate; etching a pattern in said spacer layer to produce an etched spacer layer; forming a silicon oxynitride layer on said major surface under conditions which do not adversely affect said integrated circuit; and etching said spacer layer to remove said spacer layer without removing portions of said oxynitride layer formed on said spacer layer to form said low stress free-standing oxynitride microstructure on said substrate.
Claim 16
Independent Claim
107 words
A method for forming an integrated silicon sensor comprising a low stress free-standing oxynitride microstructure, said method comprising the steps of: providing a substrate having at least one integrated circuit on the major surface thereof; forming a spacer layer on said substrate; etching a pattern in said spacer layer to produce an etched spacer layer; forming a silicon oxynitride layer on said major surface under conditions which do not adversely affect said integrated circuit; and etching said spacer layer to remove said spacer layer without removing portions of said oxynitride layer formed on said spacer layer to form said low stress free-standing oxynitride microstructure on said substrate.
Claim 17
Dependent Claim
25 words
A method according to claim 14, wherein said step of forming said oxynitride layer is carried out at a temperature not higher than 500° C.
Claim 18
Dependent Claim
18 words
A method according to claim 15, wherein said temperature is in the region of 150° to 300° C.
Claim 19
Dependent Claim
19 words
A method according to claim 14, wherein said oxynitride microstructure comprises a metal layer disposed between two oxynitride layers.
Claim 20
Dependent Claim
30 words
A method according to claim 17, wherein said metal is selected from the group consisting of aluminum, platinum, nickel, titanium, tungsten, gold, chromium, silver, palladium, titanium-tungsten, titanium-platinum, aluminum-silicon, and aluminum-silicon-copper.
Claim 21
Dependent Claim
19 words
A method according to claim 18, wherein said metal is aluminum and is encapsulated between said layers of oxynitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |