US5161729A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Package to semiconductor chip active interconnect site method
Assignee: Samsung Electronics Co Ltd
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Filing: 1991-07-11
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Granted: 1992-11-10
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Expires: 2011-07-11
Abstract
Abstract Disclosed is a composition and method for providing conductive electronic component high strength bonding. The composition comprises an effective amount of material which is less than 3% by weight of tin and greater than 97% by weight of lead. The method invention comprises providing a leadframe comprising at lest one of power, ground, and signal conductive elements; and preforming solder material onto one of the conductive elements, the solder bonding material having an effective amount of material which is less than 3% by weight of tin and greater than 97% by weight of lead.
Inventors
- 👤 Thomas J. Dunaway
- 👤 Richard K. Spielberger
- 👤 Lori A. Dicks
- 👤 Jerald M. Loy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:09
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/26; B23K35/268; H10W72/071; H10W72/077; H10W72/701
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
105 words
A method of making a connection between a conductive element in a first level of packaging and an active interconnect site on a semiconductor chip, comprising: (a) providing an alloy of solder bonding material having a composition for maintaining a single phase solid state over the temperature range of 0° C. to 150° C.; (b) placing the alloy of solder bonding material between the conductive element of the first level of packing and the active interconnect side on the semiconductor chip; and (c) reflowing the alloy of solder bonding material in order to form a connection between the conductive element and the active interconnect site.
Claim 2
Independent Claim
105 words
A method of making a connection between a conductive element in a first level of packaging and an active interconnect site on a semiconductor chip, comprising: (a) providing an alloy of solder bonding material having a composition for maintaining a single phase solid state over the temperature range of 0° C. to 150° C.; (b) placing the alloy of solder bonding material between the conductive element of the first level of packing and the active interconnect side on the semiconductor chip; and (c) reflowing the alloy of solder bonding material in order to form a connection between the conductive element and the active interconnect site.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein the providing step comprises providing an alloy of solder bonding material having less than about 2% by weight of tin and more than about 98% by weight of lead.
Claim 4
Independent Claim
103 words
A method of making a connection between a conductive element in a first level of packaging and an active interconnect site on a semiconductor chip, comprising: (a) providing an alloy of solder bonding material having less than about 2% by weight of tin and more than about 98% by weight of lead; (b) placing the alloy of solder bonding material between the conductive element of the first level of packing and the active interconnect site on the semiconductor chip; and (c) reflowing the alloy of solder bonding material in order to form a connection between the conductive element and the active interconnect site.
Claim 5
Independent Claim
103 words
A method of making a connection between a conductive element in a first level of packaging and an active interconnect site on a semiconductor chip, comprising: (a) providing an alloy of solder bonding material having less than about 2% by weight of tin and more than about 98% by weight of lead; (b) placing the alloy of solder bonding material between the conductive element of the first level of packing and the active interconnect site on the semiconductor chip; and (c) reflowing the alloy of solder bonding material in order to form a connection between the conductive element and the active interconnect site.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-10 | 1996-05-11 | 1996-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-10 | 2000-05-11 | 2000-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-10 | 2004-05-11 | 2004-11-10 | $7700.00 | Window Closed / Lapsed |