Apparatus for forming a deposited film

Claim 2

Apparatus for forming a deposition film on a carrier which comprises: a deposition chamber containing a means for holding a carrier; a first means for forming a radical spaced outside said deposition chamber for providing a first radical having a long life and low reactivity and containing at least silicon and halogen atoms, said first radical being generated from a gas selected from the group consisting of SiF 4 , SiCl 4 , Si 2 F 6 and mixtures thereof; a second means for forming a radical spaced outside said deposition chamber for providing a second radical containing hydrogen atoms, said second radical being generated from hydrogen gas; means for conducting said silicon and halogen atom-containing radicals from said first means for forming a radical to said deposition chamber; means for conducting said hydrogen atom-containing radicals from said second means for forming a radical to said deposition chamber; each of said means for conducting said silicon and halogen containing radicals and said hydrogen atom-containing radicals having an exit orifice in said deposition chamber (i) which forms an angle between 40° to 50° with the surface of said carrier, (ii) one of said orifices projecting said radicals containing at least silicon and halogen atoms and the other of said orifices simultaneously projecting said radicals containing hydrogen atoms into the deposition chamber and, wherein the projected streams of said silicon and halogen atom-containing radicals and said hydrogen atom-containing radicals are mixed to form a reactive silicon-halogen-hydrogen radical species which promotes accelerated deposition of a film on said carrier by the reaction of said hydrogen atom-containing and silicon and halogen atom-containing radicals and (iii) said exit orifices being symmetrical to each other with respect to a normal line of said carrier.

Claim 3

The apparatus of claim 1 in which the said first means for forming a radical includes a reaction furnace for thermally decomposing said gas.

Claim 4

The apparatus of claim 1 in which said means for conducting said hydrogen atom-containing radicals is a first tube for introducing hydrogen atom-containing radicals into said chamber, said first tube terminating in said chamber at an angle of 40° to 50° to the surface of said carrier and in which said means for conducting said radicals containing at least silicon and halogen atoms is a second tube for introducing at least silicon and halogen atom-containing radicals into said chamber, said second tube terminating in said chamber at an angle of 40° to 50° to the surface of said carrier.

Claim 5

The apparatus of claim 3 in which a plurality of said first tubes are provided.

Claim 6

The apparatus of claim 3 wherein a plurality of said second tubes are provided.

Claim 7

The apparatus of claim 3 in which said first and second tubes are symmetrical to each other with respect to a normal line of the carrier.

Claim 8

The apparatus of claim 1 in which the angle formed by said exit orifices with said carrier surface is about 45°.

Claim 9

The apparatus of claim 1 in which said radical containing at least silicon and halogen atoms is SiF 2 radical.

Claim 10

Apparatus for forming a deposition film on a carrier which comprises: (a) a deposition chamber containing a means for holding a carrier; (b) a first means for forming a radical which includes a reaction furnace and is spaced outside said deposition chamber for providing a radical having a long life and low reactivity and containing at least silicon and halogen atoms, said first radical being generated from a gas selected from the group consisting of SiF4, SiCl 4 , Si 2 F 6 and mixtures thereof; (c) a second means for forming a radical spaced outside said deposition chamber for providing a second radical containing hydrogen atoms, said second radical being generated from hydrogen gas; (d) means for conducting said silicon and halogen atom-containing radicals to said deposition chamber; (e) means for conducting said hydrogen atom-containing radicals from said second means for forming a radical to said deposition chamber; and (f) each of said means for conducting said silicon and halogen atom-containing radicals and said hydrogen atom-containing radicals having an exit orifice in said deposition chamber (i) which forms an angle between 40° to 50° with the surface of said carrier, (ii) one of said orifices projecting said radicals containing at least silicon and halogen atoms and the other of said orifices simultaneously projecting said radicals containing hydrogen atoms into the deposition chamber and, wherein the projected streams of said silicon and halogen atom-containing radicals and said hydrogen atom-containing radicals are mixed to form a reactive silicon-halogen-hydrogen radical species which promotes accelerated deposition of a film on said carrier by the reaction of said hydrogen atom-containing and silicon and halogen atom-containing radicals and (iii) said exit orifices being symmetrical to each other with respect to a normal line of said carrier.

Claim 11

Apparatus for forming a deposition film on a carrier which comprises: (a) a deposition chamber containing a means for holding a carrier; (b) a first means for forming a radical which includes a reaction furnace and is spaced outside said deposition chamber for providing a radical having a long life and low reactivity and containing at least silicon and halogen atoms, said first radical being generated from a gas selected from the group consisting of SiF4, SiCl 4 , Si 2 F 6 and mixtures thereof; (c) a second means for forming a radical spaced outside said deposition chamber for providing a second radical containing hydrogen atoms, said second radical being generated from hydrogen gas; (d) means for conducting said silicon and halogen atom-containing radicals to said deposition chamber; (e) means for conducting said hydrogen atom-containing radicals from said second means for forming a radical to said deposition chamber; and (f) each of said means for conducting said silicon and halogen atom-containing radicals and said hydrogen atom-containing radicals having an exit orifice in said deposition chamber (i) which forms an angle between 40° to 50° with the surface of said carrier, (ii) one of said orifices projecting said radicals containing at least silicon and halogen atoms and the other of said orifices simultaneously projecting said radicals containing hydrogen atoms into the deposition chamber and, wherein the projected streams of said silicon and halogen atom-containing radicals and said hydrogen atom-containing radicals are mixed to form a reactive silicon-halogen-hydrogen radical species which promotes accelerated deposition of a film on said carrier by the reaction of said hydrogen atom-containing and silicon and halogen atom-containing radicals and (iii) said exit orifices being symmetrical to each other with respect to a normal line of said carrier.