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US4485121A
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Method for producing a fluorine-containing amorphous semiconductor
Assignee: Tokyo Institute of Technology
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Filing: 1983-06-10
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Granted: 1984-11-27
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Expires: 2003-06-10
Abstract
Abstract Production of fluorine-containing amorphous semiconductors having high thermal stability, photoconductivity and photosensitivity by decomposing a mixed gas of silicon difluoride gas or silicon monofluoride gas with hydrogen gas or hydrogen atom gas, or SiFH 3 gas or SiF 2 H 2 gas with electric discharge and depositing the decomposed gas on a substrate.
Inventors
- 👤 Hideki Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:39
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
65 words
A method for producing a fluorine-containing amorphous semiconductor, which comprises decomposing a mixed gas obtained by mixing silicon difluoride SiF 2 gas or silicon monofluoride SiF gas with hydrogen (H 2 ) gas or hydrogen atom (H) gas, or SiFH 3 gas or SiF 2 H 2 gas with electric discharge and depositing the decomposed gas on a substrate to form a fluorine-containing amorphous semiconductor.
Claim 2
Independent Claim
65 words
A method for producing a fluorine-containing amorphous semiconductor, which comprises decomposing a mixed gas obtained by mixing silicon difluoride SiF 2 gas or silicon monofluoride SiF gas with hydrogen (H 2 ) gas or hydrogen atom (H) gas, or SiFH 3 gas or SiF 2 H 2 gas with electric discharge and depositing the decomposed gas on a substrate to form a fluorine-containing amorphous semiconductor.
Claim 3
Dependent Claim
17 words
The method as claimed in claim 1, wherein the formed fluorine-containing amorphous semiconductor is fluorine-containing amorphous silicon.
Claim 4
Dependent Claim
34 words
The method as claimed in claim 1, wherein the formed fluorine-containing amorphous semiconductor is a semiconductor in which fluorine-containing amorphous silicon is a basic skeleton and other elements are contained in the basic skeleton.
Claim 5
Dependent Claim
21 words
The method as claimed in claim 3, wherein said fluorine-containing amorphous semiconductor is fluorine-containing amorphous silicon carbide or amorphous silicon germanium.
Claim 6
Dependent Claim
20 words
The method as claimed in claim 1, wherein the decomposition is carried out at a temperature of about 250°-600° C.
Claim 7
Dependent Claim
15 words
The method as claimed in claim 5, wherein the decomposition temperature is about 250°-500° C.
Claim 8
Dependent Claim
15 words
The method as claimed in claim 5, wherein the decomposition temperature is about 500°-600° C.
References Cited (Backward Citations)
US4226898A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-27 | 1988-05-28 | 1988-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-27 | 1992-05-28 | 1992-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-27 | 1996-05-28 | 1996-11-27 | $7700.00 | Window Closed / Lapsed |