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US5152930A
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Carbon chalcogenide macromolecular composition and process for preparation thereof
Assignee: Lockheed Martin Corp
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Filing: 1991-02-13
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Granted: 1992-10-06
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Expires: 2011-02-13
Abstract
Abstract A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a non-reactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.
Inventors
- 👤 Clifford L. Spiro
- 👤 William F. Banholzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:19
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
36 words
A carbon chalcogenide composition consisting of a macromolecular structure of aromatic carbon and chalcogen, having a ratio of chalcogen atoms to carbon atoms of about 0.01 to 0.5, the composition having free carbon radicals interlinked therein.
Claim 2
Dependent Claim
36 words
A carbon chalcogenide composition consisting of a macromolecular structure of aromatic carbon and chalcogen, having a ratio of chalcogen atoms to carbon atoms of about 0.01 to 0.5, the composition having free carbon radicals interlinked therein.
Claim 3
Dependent Claim
21 words
The carbon chalcogenide composition according to claim 1, wherein chalcogen is selected from the group consisting of sulfur, selenium and tellurium.
Claim 4
Dependent Claim
13 words
The carbon chalcogenide macromolecular composition of claim 1 wherein the chalcogen is sulfur.
Claim 5
Dependent Claim
26 words
The composition of claim 1 further comprising a dopant selected from the group consisting of iodine, bromine, chlorine, fluorine, perchlorate ion, sulfur hexafluoride and boron tetrafluoride.
Claim 6
Dependent Claim
36 words
A carbon sulfide composition consisting of a macromolecular structure of aromatic carbon and sulfur, having a ratio of sulfur atoms to carbon atoms of about 0.01 to 0.5, the composition having free carbon radicals interlinked therein.
Claim 7
Dependent Claim
36 words
A carbon sulfide composition consisting of a macromolecular structure of aromatic carbon and sulfur, having a ratio of sulfur atoms to carbon atoms of about 0.01 to 0.5, the composition having free carbon radicals interlinked therein.
Claim 8
Dependent Claim
13 words
The carbon sulfide composition of claim 5, wherein the composition is a powder.
Claim 9
Dependent Claim
13 words
The carbon sulfide composition of claim 5, wherein the composition is a film.
Claim 10
Dependent Claim
27 words
The doped composition of claim 5 further comprising a dopant selected from the group consisting of iodine, bromine, chlorine, fluorine, perchlorate ion, sulfur hexafluoride and boron tetrafluoride.
Claim 11
Dependent Claim
80 words
A carbon sulfide composition as in claim 5 prepared according to a process comprising: entraining carbon disulfide in an argon gas to form a mixture; passing said mixture into a CVD reactor chamber over a tungsten filament heated to about 1500°-25° C.; thermally degrading said carbon disulfide entrained in said mixture into fragments; depositing said fragments onto a target substrate maintained at about 200° to 500° C.; and recombining said fragments on said substrate to form said carbon sulfide composition.
Claim 12
Dependent Claim
23 words
The carbon sulfide composition according to claim 9 wherein said tungsten filament is positioned from 1 to 2 inches from said target substrate.
Claim 13
Dependent Claim
17 words
The carbon sulfide composition according to claim 9 wherein pressure in said CVD chamber is 3 Torr.
Claim 14
Dependent Claim
86 words
A carbon sulfide composition consisting of a macromolecular structure of aromatic carbon and sulfur, having a ratio of sulfur atoms to carbon atoms of about 0.01 to 0.5, the composition having: a hardness of more than 9 and less than 10 on the Mohs scale; an ability to transmit infrared light; a chemical stability in organic solvents, alkali and strong mineral acids; and a resistivity of about 1-100,000 ohm-centimeters when measured by compressing a film of said composition between two metallic discs of one centimeter diameter.
Claim 15
Dependent Claim
86 words
A carbon sulfide composition consisting of a macromolecular structure of aromatic carbon and sulfur, having a ratio of sulfur atoms to carbon atoms of about 0.01 to 0.5, the composition having: a hardness of more than 9 and less than 10 on the Mohs scale; an ability to transmit infrared light; a chemical stability in organic solvents, alkali and strong mineral acids; and a resistivity of about 1-100,000 ohm-centimeters when measured by compressing a film of said composition between two metallic discs of one centimeter diameter.
Claim 16
Dependent Claim
24 words
The carbon sulfide composition according to claim 12 wherein a current/voltage characteristics of said composition is as per the graph shown in FIG. 2.
Claim 17
Dependent Claim
29 words
The carbon sulfide composition according to claim 12 wherein an apparent resistance of said composition as a function of temperature is as per the graph shown in FIG. 3.
Claim 18
Dependent Claim
30 words
The carbon sulfide composition according to claim 12, which further comprises a dopant selected from the group consisting of iodine, chlorine, bromine, fluorine, perchlorate ion, sulfur hexafluoride and boron tetrafluoride.
Claim 19
Dependent Claim
89 words
A carbon chalcogenide composition as in claim 1 prepared according to a process comprising: entraining carbon dichalcogenide in an argon gas to form a mixture; passing said mixture into a CVD reactor chamber over a tungsten filament heated to about 200°-4,000° C.; thermally degrading said carbon dichalcogenide entrained in said mixture into fragments; depositing said fragments onto a target substrate maintained at about 20° to 1000° C. and positioned 1 to 2 inches from said filament; and recombining said fragments on said substrate to form said carbon chalcogenide composition.
Claim 20
Dependent Claim
20 words
The carbon chalcogenide composition according to claim 16 wherein said carbon dichalcogenide is carbon disulfide, carbon diselenide or carbon ditelluride.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-10-06 | 1996-04-06 | 1996-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-06 | 2000-04-06 | 2000-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-06 | 2004-04-06 | 2004-10-06 | $7700.00 | Window Closed / Lapsed |