Semiconductor device

Claim 2

A semiconductor device for detecting a strength of a magnetic field, comprising: a semiconductor wafer; an active layer of a Group III and V element compound semiconductor formed on said semiconductor wafer, said active layer comprising: a) a first pair of convex portions of a generally convex shape, a first convex portion of said first pair being opposite to a second convex portion thereof and connected thereto at a connection portion; b) a second pair of convex portions of a generally convex shape, a third convex portion of said second pair being opposite to a fourth convex portion thereof and connected thereto at a connection portion, said first and second pairs arranged so that said first pair of convex portions crosses said second pair of convex portions; and c) a crossing portion having a same crystalline surface thereof exposed at all points where said first pair of convex portions crosses said second pair of convex portions; a pair of input terminals each of which is electrically connected to each convex portion of said first pair and adapted to input electric current to said each convex portion of said first pair; and a pair of output terminals each of which is electrically connected to each convex portion of said second pair and connected to output a voltage generated in said active layer in response to a magnetic field strength, wherein said first pair of convex portions and said second pair of convex portions are formed so that a ratio of a width of said connection portion of said second pair to a length of said connection portion of said first pair is equal to or less than 0.23.

Claim 3

A semiconductor device for detecting a strength of a magnetic field, comprising: a semiconductor wafer having a face-orientation of (100); an active layer of a Group III and V element compound semiconductor formed on said semiconductor wafer and having a face-orientation (100), said active layer comprising: a) a first pair of convex portions of a generally convex shape, a first convex portion of said first pair being opposite to a second convex portion thereof and connected thereto at a connection portion so that a direction thereof to one of crystalline-faces (011), (011) and (011) of said wafer is set at an angle of 90°±β°, tan β=1/3; and b) a second pair of convex portions of a generally convex shape, a third convex portion of said second pair being opposite to a fourth convex portion thereof and connected thereto at a connection portion said first and second convex portions cross said third and fourth portions, at least one of said convex portions including at least one mesa-shaped section; c) a crossing portion having a same type crystalline surface thereof exposed at all points where said first pair of convex portions cross said second pair of convex portions; a pair of input terminals each of which is electrically connected to each convex portion of one of said first pair and second pair and adapted to input electric current to said each convex portion of said first pair; and a pair of output terminals each of which is electrically connected to each convex portion of the other of said first pair and said second pair so as to output voltage generated in said active layer in response to a magnetic field strength.

Claim 4

A semiconductor device for detecting a strength of a magnetic field, comprising: a semiconductor wafer having a face-orientation of (100); an active layer of a Group III and V element compound semiconductor formed on said semiconductor wafer and having a face-orientation (100), said active layer comprising: a) a first pair of convex portions of a generally convex shape, a first convex portion of said first pair being opposite to a second convex portion thereof and connected thereto at a connection portion so that a direction thereof to one of crystalline-faces (011), (011) and (011) of said wafer is set at an angle of 90°±β°, tan β=1/3; and b) a second pair of convex portions of a generally convex shape, a third convex portion of said second pair being opposite to a fourth convex portion thereof and connected thereto at a connection portion said first and second convex portions cross said third and fourth portions, at least one of said convex portions including at least one mesa-shaped section; c) a crossing portion having a same type crystalline surface thereof exposed at all points where said first pair of convex portions cross said second pair of convex portions; a pair of input terminals each of which is electrically connected to each convex portion of one of said first pair and second pair and adapted to input electric current to said each convex portion of said first pair; and a pair of output terminals each of which is electrically connected to each convex portion of the other of said first pair and said second pair so as to output voltage generated in said active layer in response to a magnetic field strength.

Claim 5

A semiconductor device according to claim 2, wherein said first pair of convex portions crosses said second pair of convex portions with a substantially right angle.

Claim 6

A semiconductor device according to claim 2, wherein said second pair of convex portions has at least one mesa-shaped section.

Claim 7

A semiconductor device according to claim 2, wherein a ratio of a length of said connection portion of said second pair to a width of said connection portion said first pair is equal to or less than 0.23.

Claim 8

A semiconductor device according to claim 2, wherein said first pair of convex portions and said second pair of convex portions are formed so that a ratio of a width (w) of said convex portion of first pair to a length (w') of said second pair is equal or less than 0.26.

Claim 9

A semiconductor device according to claim 2, wherein said semiconductor wafer is made of silicon.

Claim 10

A semiconductor device according to claim 2, wherein said active layer is made of gallium arsenide.

Claim 11

A semiconductor device according to claim 1, wherein said first pair of convex portions and said second pair of convex portions are formed so that a ratio of a width (w) of said convex portion of said first pair to a length (w') of said second pair is equal or less than 0.26.

Claim 12

A semiconductor device according to claim 1, wherein said semiconductor wafer is made of silicon.

Claim 13

A semiconductor device according to claim 1, wherein said active layer is made of gallium arsenide.

Claim 14

A semiconductor device according to claim 1, wherein said first pair of convex portions crosses said second pair of convex portions at a right angle.

Claim 15

A semiconductor device according to claim 11, wherein said active layer has a face-orientation (100), and one of said first pair and second pair is formed so that a direction thereof to one of crystalline-faces (011), (011), (011), of said wafer is set at an angle of 90°±β°, tan β=1/3.