Semiconductor laser device

Claim 2

In a semiconductor laser device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer.

Claim 3

The device of claim 1, further comprising a buffer layer formed between said main surface and said clad layer of the first conductivity type.

Claim 4

The device of claim 1, wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.

Claim 5

The device of claim 1, wherein said active layer further contains Al.

Claim 6

The device of claim 4, wherein said clad layers and said active layer have a composition of (Al x Ga 1-x ) 0 .5 In 0 .5 P and the values of x in said clad layer being greater than in said active layer.

Claim 7

The device of claim 5, wherein the value of x in said active layer is in the range of from about 0.1 to about 0.15.

Claim 8

The device of claim 2, wherein said buffer layer is of the first conductivity type.

Claim 9

The device of claim 1, further comprising a GaAs cap layer of the second conductivity type formed on said clad layer of the second conductivity type.

Claim 10

The device of claim 8, further comprising a current blocking layer of SiO 2 formed on said cap layer of the second conductivity type, said blocking layer having a stripe-shaped opening for enabling passage of current.

Claim 11

In a semiconductor laser device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer, whereby a main wavelength of light emitted from said semiconductor laser device is shorter than that of light emitted from a semiconductor laser device including a GaAs substrate having a main surface of a {100} plane.

Claim 12

In a semiconductor laser device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer, whereby a main wavelength of light emitted from said semiconductor laser device is shorter than that of light emitted from a semiconductor laser device including a GaAs substrate having a main surface of a {100} plane.

Claim 13

The device of claim 10, further comprising a buffer layer formed between said main surface and said clad layer of the first conductivity type.

Claim 14

The device of claim 10, wherein said active layer further contains Al.

Claim 15

The device of claim 10 wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.

Claim 16

In a semiconductor light emitting device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer.

Claim 17

In a semiconductor light emitting device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer.

Claim 18

The device of claim 14, further comprising a buffer layer formed between said main surface and said clad layer of the first conductivity type.

Claim 19

The device of claim 14, wherein said active layer further contains Al.

Claim 20

The device of claim 15, wherein said buffer layer is of the first conductivity type.

Claim 21

The device of claim 14 wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.

Claim 22

In a semiconductor light emitting device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer, whereby a main wavelength of light emitted from said semiconductor light emitting device is shorter than that of light emitted from a semiconductor light emitting device including a GaAs substrate having a main surface of a {100} plane.

Claim 23

In a semiconductor light emitting device comprising: a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P, formed on said main surface, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer, whereby a main wavelength of light emitted from said semiconductor light emitting device is shorter than that of light emitted from a semiconductor light emitting device including a GaAs substrate having a main surface of a {100} plane.

Claim 24

The device of claim 19, further comprising a buffer layer formed between said main surface and said clad layer of the first conductivity type.

Claim 25

The device of claim 19, wherein said active layer further contains Al.

Claim 26

The device of claim 19 wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.