US5010556A
Expired / Lapsed
US
⏱️ 0.0 years remaining
A stripe-shaped heterojunction laser with unique current confinement
Assignee: Omron Corp
•
Filing: 1989-01-13
•
Granted: 1991-04-23
•
Expires: 2009-01-13
Abstract
Abstract A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
Inventors
- 👤 Koichi Imanaka
- 👤 Hiroshi Imamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:33
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/24; H01S5/30; H01S5/305; H01S5/2231; H01S5/2237; H01S5/2238; H01S5/3077; H01S5/3081; H01S5/32; H01S5/323; H01S5/32308; Y; Y10; Y10S; Y10S148/00; Y10S148/041; Y10S148/056; Y10S148/072; Y10S148/095
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a difference in level exposing an (n11) (n=1-5) A face; an Si-doped Al z Ga 1-z As current restriction layer formed on said substrate; a p-type Al y Ga 1-y As cladding layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Sn as a dopant formed on said active layer; and an n + -GaAs contact layer formed on said n-type cladding layer.
Claim 2
Dependent Claim
105 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a difference in level exposing an (n11) (n=1-5) A face; an Si-doped Al z Ga 1-z As current restriction layer formed on said substrate; a p-type Al y Ga 1-y As cladding layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Sn as a dopant formed on said active layer; and an n + -GaAs contact layer formed on said n-type cladding layer.
Claim 3
Dependent Claim
33 words
The semiconductor laser according to claim 1, further comprising: an n-side electrode provided on a top surface of said contact layer, and a p-side electrode provided on a bottom surface of said substrate.
Claim 4
Dependent Claim
17 words
The semiconductor laser according to claim 1, wherein said difference in level is formed by terrace etching.
Claim 5
Dependent Claim
32 words
The semiconductor laser according to claim 1, wherein said current restriction layer, said p-type cladding layer, said active layer, said n-type cladding layer and said contact layer are grown by molecular-beam epitaxy.
Claim 6
Dependent Claim
103 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a groove exposing an (n11) (n=1-5) A face; an Si-doped Al z Ga 1-z As current restriction layer formed on said substrate; a p-type Al y Ga 1-y As cladding layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Sn as a dopant formed on said active layer; and an n + -GaAs contact layer formed on said n-type cladding layer.
Claim 7
Dependent Claim
103 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a groove exposing an (n11) (n=1-5) A face; an Si-doped Al z Ga 1-z As current restriction layer formed on said substrate; a p-type Al y Ga 1-y As cladding layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Sn as a dopant formed on said active layer; and an n + -GaAs contact layer formed on said n-type cladding layer.
Claim 8
Dependent Claim
33 words
The semiconductor laser according to claim 5, further comprising: an n-side electrode provided on a top surface of said contact layer, and a p-side electrode provided on a bottom surface of said substrate.
Claim 9
Dependent Claim
17 words
The semiconductor laser according to claim 5, wherein said groove is formed by etching through a mask.
Claim 10
Dependent Claim
32 words
The semiconductor laser according to claim 5, wherein said current restriction layer, said p-type cladding layer, said active layer, said n-type cladding layer and said contact layer are grown by molecular-beam epitaxy.
Claim 11
Dependent Claim
96 words
A semiconductor laser having internal current restriction, comprising: an n-sided electrode and a p-sided electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a groove exposing an (n11) (n=1-5) A face; an Si-doped Al z GA 1-z As current restriction layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Si as a dopant and acting as a current restriction layer from an electron injection direction; and an n-type GaAs contact layer formed on said n-type cladding layer.
Claim 12
Dependent Claim
96 words
A semiconductor laser having internal current restriction, comprising: an n-sided electrode and a p-sided electrode; a resonant cavity; a (100) face-oriented p-type GaAs substrate having a groove exposing an (n11) (n=1-5) A face; an Si-doped Al z GA 1-z As current restriction layer formed on said current restriction layer; an active layer formed on said p-type cladding layer; an n-type Al x Ga 1-x As cladding layer having Si as a dopant and acting as a current restriction layer from an electron injection direction; and an n-type GaAs contact layer formed on said n-type cladding layer.
Claim 13
Dependent Claim
33 words
The semiconductor laser according to claim 9, further comprising: an n-side electrode provided on a top surface of said contact layer, and a p-side electrode provided on a bottom surface of said substrate.
Claim 14
Dependent Claim
17 words
The semiconductor laser according to claim 9, wherein said difference in level is formed by terrace etching.
Claim 15
Dependent Claim
32 words
The semiconductor laser according to claim 9, wherein said current restriction layer, said p-type cladding layer, said active layer, said n-type cladding layer and said contact layer are grown by molecular-beam epitaxy.
Claim 16
Dependent Claim
79 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a difference in level exposing an (n11) (n=1-5) A face formed on a (100) face-oriented p-type GaAs layer as a surface layer; an Si-doped AlGaAs or GaAs layer grown on the substrate; an AlGaAs type active layer; and a double heterojunction structure having an n-type cladding layer in the form of tin-doped AlGaAs and provided on the AlGaAs or GaAs layer.
Claim 17
Dependent Claim
79 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a difference in level exposing an (n11) (n=1-5) A face formed on a (100) face-oriented p-type GaAs layer as a surface layer; an Si-doped AlGaAs or GaAs layer grown on the substrate; an AlGaAs type active layer; and a double heterojunction structure having an n-type cladding layer in the form of tin-doped AlGaAs and provided on the AlGaAs or GaAs layer.
Claim 18
Dependent Claim
99 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a difference in level exposing an (n11) (n=1-3) A face formed on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; an Si-doped AlGaAs or GaAs layer grown on the substrate; an AlGaAs type active layer; a double heterojunction structure having an n-type cladding layer in the form of an Si-doped AlGaAs layer and provided on the AlGaAs layer; and an n-type cap layer provided on the double heterojunction structure.
Claim 19
Dependent Claim
99 words
A semiconductor laser having internal current restriction, comprising: an n-side electrode and a p-side electrode; a resonant cavity; a difference in level exposing an (n11) (n=1-3) A face formed on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; an Si-doped AlGaAs or GaAs layer grown on the substrate; an AlGaAs type active layer; a double heterojunction structure having an n-type cladding layer in the form of an Si-doped AlGaAs layer and provided on the AlGaAs layer; and an n-type cap layer provided on the double heterojunction structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |