Self-aligning current constriction type semiconductor light emitting element

Abstract

Abstract PURPOSE:To improve characteristics and mass-producibility of a light emitting element by a method wherein, when a recessed part on a GaAs substrate is etched, the width and the depth of a stripe is measured beforehand and the oscillation is so controlled as to realize single horizontal mode by grown thickness of an N-type cladding layer. CONSTITUTION:After a part of a photoresist on an N-type GaAs substrate 12 is removed with the width of 2mum, the substrate 12 is etched by an etchant with strong selectivity to form a stripe 19 with the depth of 1mum and the width of 35mum. On this substrate, an N-type Ga0.6Al0.4As cladding layer 13, an N-type Ga0.95Al0.05As active layer 14, a P-type Ga0.6Al0.4As cladding layer 15, an N-type Ga0.6Al0.4As cladding layer 16, a P-type Ga0.6Al0.4As cladding layer 17 and a P-type GaAs ohmic layer 18 are successively made to grow. A horizontal mode is controlled by the width (d) of a light emitting region and determined by the width W of the bottom of the stripe on the substrate and the thickness (l) of the cladding layer 13 and an angle theta. The angle theta is constantly 47 deg. from experience and the relation d=W-2l/tan 47 deg. exits. If the width W is measured beforehand, the laser which oscillates single horizontal mode can be controlled by the grown thickness (l) of the cladding layer 13.

Inventors

• 👤 Motoyuki Yamamoto
• 👤 山本　基幸
• 👤 Yasuhiko Tsuburai
• 👤 粒来　保彦

Bibliographic Details