US4503539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Sony Corp
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Filing: 1984-04-13
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Granted: 1985-03-05
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Expires: 2004-04-13
Abstract
Abstract A new laser structure having self-aligned junction stripe geometry grown by the MO CVD process is disclosed. The laser is grown on a groove-etched substrate and has a DH structure with a small V-shaped active region. A current path in the V-shaped region is formed using anomalous zinc diffusion during growth, which allows a broad area metal contact for both sides of the wafer.
Inventors
- 👤 Yoshifumi Mori
- 👤 Osamu Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:05
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/2237; H01S5/3077; H01S5/32; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
96 words
In a semiconductor laser comprising: a planar semiconductor substrate having an elongated groove with slanting planar surfaces in one of its planar surfaces, a semiconductor active layer formed on said one planar surface, an active region aligned with said groove and having planar surfaces parallel to the slanting planar surfaces of said elongated groove, a pair of semiconductor layers sandwiching said active layer and having wider energy gaps than said active layer, and a p-n junction having a first part adjacent said active region and a second part in one of said pair of semiconductor layers.
Claim 2
Dependent Claim
96 words
In a semiconductor laser comprising: a planar semiconductor substrate having an elongated groove with slanting planar surfaces in one of its planar surfaces, a semiconductor active layer formed on said one planar surface, an active region aligned with said groove and having planar surfaces parallel to the slanting planar surfaces of said elongated groove, a pair of semiconductor layers sandwiching said active layer and having wider energy gaps than said active layer, and a p-n junction having a first part adjacent said active region and a second part in one of said pair of semiconductor layers.
Claim 3
Dependent Claim
18 words
A semiconductor laser according to claim 1, in which said one planar surface is in the (100) plane.
Claim 4
Dependent Claim
22 words
A semiconductor laser according to claim 2, in which said groove is elongated along the <110> direction and has slanting (111) planes.
Claim 5
Dependent Claim
129 words
In a semiconductor laser comprising: a planar semiconductor substrate having an elongated groove with slanting planar surfaces in one of its planar surfaces, a semiconductor active layer formed on said one planar surface, an active region aligned with said groove and having planar surfaces parallel to the slanting planar surfaces of said elongated groove, a pair of semiconductor layers sandwiching said active layer and having wider energy gaps than said active layer, and a p-n junction having a first part adjacent said active region and a second part in one of said pair of semiconductor layers, in which said one planar surface is in the (100) plane, and in which said groove is oriented in the <110> direction and has slanting surfaces which are nearly in (311) B planes.
Claim 6
Dependent Claim
129 words
In a semiconductor laser comprising: a planar semiconductor substrate having an elongated groove with slanting planar surfaces in one of its planar surfaces, a semiconductor active layer formed on said one planar surface, an active region aligned with said groove and having planar surfaces parallel to the slanting planar surfaces of said elongated groove, a pair of semiconductor layers sandwiching said active layer and having wider energy gaps than said active layer, and a p-n junction having a first part adjacent said active region and a second part in one of said pair of semiconductor layers, in which said one planar surface is in the (100) plane, and in which said groove is oriented in the <110> direction and has slanting surfaces which are nearly in (311) B planes.
References Cited (Backward Citations)
US4251298A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |