Light responsive semiconductor device

Claim 2

A light responsive semiconductor apparatus comprising: first and second semiconductor light responsive devices, each device including an intrinsic layer in which a multiple quantum well structure is buried for the generation of a photocurrent in response to the absorption of incident light, each intrinsic layer being sandwiched between a p-type layer and an n-type layer, the light responsive devices being disposed on a continuous substrate wherein the intrinsic layers of the first and second devices are serially arranged for the passage of incident light substantially parallel to the layers sequentially through the first and second devices; and first and second external resistors respectively corresponding to said first and second devices and electrically connected across the respective devices for indicating the flow of a photocurrent generated in response to absorption of incident light by the respective devices, the values of the first and second resistors being chosen to provide a discontinuous change in the respective photocurrents of both devices at respective first and second critical wavelengths of incident light, the first critical wavelength being longer than the second critical wavelength.

Claim 3

A photodetector comprising: a semiconductor substrate of a first conductivity type; an intrinsic layer disposed on the substrate and including a multiple quantum well structure buried within the intrinsic layer for absorbing incident light and generating a photocurrent in response thereto; at least first and second second conductivity type semiconductor layers electrically isolated from each other and disposed on the intrinsic layer; a first common electrode disposed on the substrate; first and second second electrodes respectively disposed on the first and second second conductivity type layer; and electrical biasing means for applying different electrical biases between the common electrode and the respective first and second second electrodes for establishing different, first and second critical wavelengths within the multiple quantum well layer opposite the first and second second electrodes for selectively absorbing components of light having wavelengths longer than the respective first and second critical wavelengths, the incident light in the incident generally parallel to the layers, sequentially passing between the first electrode and the first second electrode and the first electrode and the second second electrode, the first critical wavelength being longer than the second critical wavelength.

Claim 4

A photodetector comprising: a semiconductor substrate of a first conductivity type; an intrinsic layer disposed on the substrate and including a multiple quantum well structure buried within the intrinsic layer for absorbing incident light and generating a photocurrent in response thereto; at least first and second second conductivity type semiconductor layers electrically isolated from each other and disposed on the intrinsic layer; a first common electrode disposed on the substrate; first and second second electrodes respectively disposed on the first and second second conductivity type layer; and electrical biasing means for applying different electrical biases between the common electrode and the respective first and second second electrodes for establishing different, first and second critical wavelengths within the multiple quantum well layer opposite the first and second second electrodes for selectively absorbing components of light having wavelengths longer than the respective first and second critical wavelengths, the incident light in the incident generally parallel to the layers, sequentially passing between the first electrode and the first second electrode and the first electrode and the second second electrode, the first critical wavelength being longer than the second critical wavelength.