Trench gate metal oxide semiconductor field effect transistor

Claim 2

In a trench gate MOS FET formed in a surface of a semiconductor substrate, the FET having: a trench formed in the surface of the substrate, the trench having a side wall; and a trench gate composed of a dielectric film on the side wall of the trench and an electrode on the dielectric film, the improvement wherein: said trench has a depth, perpendicular to the surface of said substrate, not greater than 0.5μ; and said FET further comprises a drain impurity diffusion region composed of a low impurity concentration layer adjacent said dielectric film, and a high impurity concentration layer adjacent said low impurity concentration layer, both of said layers extending from the substrate surface.

Claim 3

In a trench gate MOS FET formed in a surface of a semiconductor substrate, the FET having: a trench formed in the surface of the substrate, the trench having a side wall; a trench gate composed of a dielectric film on the side wall of the trench and an electrode on the dielectric film; and an impurity diffusion layer located at the surface of the substrate adjacent the trench, the improvement wherein said dielectric film has a greater thickness where it is adjacent said impurity diffusion layer than at a location below said impurity diffusion layer, and said trench has a depth, perpendicular to the surface of said substrate, no greater than 0.5μ.

Claim 4

In a trench gate MOS FET formed in a surface of a semiconductor substrate, the FET having: a trench formed in the surface of the substrate, the trench having a side wall; a trench gate composed of a dielectric film on the side wall of the trench and an electrode on the dielectric film; and an impurity diffusion layer located at the surface of the substrate adjacent the trench, the improvement wherein said dielectric film has a greater thickness where it is adjacent said impurity diffusion layer than at a location below said impurity diffusion layer, and said trench has a depth, perpendicular to the surface of said substrate, no greater than 0.5μ.

Claim 5

In a trench gate MOS FET formed in a surface of a substrate, the substrate being of a first conductivity type, the FET having: a first trench formed in the surface of the substrate, the first trench having a side wall; and a first trench gate composed of a first dielectric film on the side wall of the first trench and a first electrode on the first dielectric film, the improvement wherein said FET further comprises: a second trench formed in the surface of said substrate and spaced from said first trench, said second trench having a side wall; a second trench gate composed of a second dielectric film on said side wall of said second trench and a second electrode on said second dielectric film; a third trench formed in the surface of said substrate and spaced from said second trench in a direction such that said second trench is located between said first trench and said third trench, and a body of dielectric material in said third trench; a first diffused region of a second conductivity type opposite to the first conductivity type formed in the surface of said substrate and extending between said first and second trench gates; a channel region in said substrate beneath said first diffused region and extending only between said first and second trench gates; and a second diffused region of the second conductivity type in said substrate, said second diffused region being composed of a first part located beneath said channel region and extending between said first and second trench gates, and a second part which extends between said second trench gate and said first trench and which is contiguous with said first part.

Claim 6

In a trench gate MOS FET formed in a surface of a substrate, the substrate being of a first conductivity type, the FET having: a first trench formed in the surface of the substrate, the first trench having a side wall; and a first trench gate composed of a first dielectric film on the side wall of the first trench and a first electrode on the first dielectric film, the improvement wherein said FET further comprises: a second trench formed in the surface of said substrate and spaced from said first trench, said second trench having a side wall; a second trench gate composed of a second dielectric film on said side wall of said second trench and a second electrode on said second dielectric film; a third trench formed in the surface of said substrate and spaced from said second trench in a direction such that said second trench is located between said first trench and said third trench, and a body of dielectric material in said third trench; a first diffused region of a second conductivity type opposite to the first conductivity type formed in the surface of said substrate and extending between said first and second trench gates; a channel region in said substrate beneath said first diffused region and extending only between said first and second trench gates; and a second diffused region of the second conductivity type in said substrate, said second diffused region being composed of a first part located beneath said channel region and extending between said first and second trench gates, and a second part which extends between said second trench gate and said first trench and which is contiguous with said first part.