Process for depositing highly doped polysilicon layer on stepped surface of semiconductor wafer resulting in enhanced step coverage

Claim 2

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer which comprises: a) depositing a layer of doped polysilicon having an average thickness of from about 400 to about 800 Angstroms on said stepped surface; b) depositing a layer of undoped polysilicon having an average thickness of from about 400 to about 800 Angstroms over said doped polysilicon; c) depositing a further amount of doped polysilicon over said undoped polysilicon; and d) rapidly annealing said deposited polysilicon by raising the temperature of said coated wafer to an annealing temperature of from about 850° C. to about 1000° C. at a rate of from about 50° C./second to about 100° C./second and then maintaining said wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute the dopant throughout the deposited polysilicon layer; whereby said deposited polysilicon will comprise a doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface of said semiconductor wafer.

Claim 3

The process of claim 1 wherein steps a and b are each repeated at least one additional time to increase the thickness of the deposited layer of polysilicon.

Claim 4

The process of claim 1 wherein step a is carried out for a time period of from about 20 seconds to about 2 minutes.

Claim 5

The process of claim 1 wherein step a is carried out for a time period of from about 45 seconds to about 1 minute.

Claim 6

The process of claim 1 wherein step b is carried out for a time period of from about 20 seconds to about 1.5 minutes.

Claim 7

The process of claim 1 wherein step b is carried out for a time period of from about 45 seconds to about 1 minute.

Claim 8

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing a source of silicon and a source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a first layer of doped polysilicon on said stepped surface; b) stopping the flow of said source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a first layer of undoped polysilicon over said doped polysilicon on said stepped surface of said wafer; c) restarting sad flow of said source of dopant into said chamber while continuing to flow said source of silicon into said chamber to deposit from about 400 to about 800 Angstroms of a second layer of doped polysilicon on said stepped surface; d) again stopping the flow of said source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a second layer of undoped polysilicon over said second layer of doped polysilicon on said stepped surface of said wafer; and e) rapidly annealing said deposited polysilicon by rapidly raising the temperature of said coated wafer to an annealing temperature of at least about 850° C. at a rate of from about 50° C./second to about 100° C./second, and then maintaining said wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout the deposited polysilicon; whereby said deposited polysilicon will comprise a doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface of said semiconductor wafer.

Claim 9

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing a source of silicon and a source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a first layer of doped polysilicon on said stepped surface; b) stopping the flow of said source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a first layer of undoped polysilicon over said doped polysilicon on said stepped surface of said wafer; c) restarting sad flow of said source of dopant into said chamber while continuing to flow said source of silicon into said chamber to deposit from about 400 to about 800 Angstroms of a second layer of doped polysilicon on said stepped surface; d) again stopping the flow of said source of dopant into said chamber to deposit from about 400 to about 800 Angstroms of a second layer of undoped polysilicon over said second layer of doped polysilicon on said stepped surface of said wafer; and e) rapidly annealing said deposited polysilicon by rapidly raising the temperature of said coated wafer to an annealing temperature of at least about 850° C. at a rate of from about 50° C./second to about 100° C./second, and then maintaining said wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout the deposited polysilicon; whereby said deposited polysilicon will comprise a doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface of said semiconductor wafer.

Claim 10

The process of claim 7 wherein said source of silicon is flowed into said chamber at a rate equivalent to from about 100 to about 1000 sccm into a 3 liter chamber.

Claim 11

The process of claim 8 wherein said source of silicon is a silane gas.

Claim 12

The process of claim 7 wherein said dopant is phosphorus.

Claim 13

The process of claim 10 wherein said phosphorus dopant comprises a mixture of about 1 volume % PH 3 and about 99 volume % H 2 .

Claim 14

The process of claim 7 wherein steps a and b are each repeated at least one additional time to increase the thickness of the deposited layer of polysilicon.

Claim 15

The process of claim 7 wherein step a is carried out for a time period of from about 45 seconds to about 1 minute.

Claim 16

The process of claim 9 wherein step b is carried out for a time period of from about 45 seconds to about 1 minute.

Claim 17

The process of claim 7 wherein said vacuum chamber is maintained at a pressure within a range of from about 25 to about 200 Torr during said deposition steps.

Claim 18

The process of claim 7 wherein said wafer in said vacuum chamber is maintained at a temperature within a range of from about 600° C. to about 700° C. during said deposition steps.

Claim 19

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing into said chamber for a time period of from about 20 seconds to about 2 minutes; i) a source of silicon selected from the class consisting of SiH 4 and Si 2 H 6 at a flow rate equivalent to from about 100 to about 1000 sccm into a 3 liter chamber; and ii) a source of dopant selected from the class consisting of PH 3 , B 2 H 3 , BCl 3 , and AsH 3 into said chamber at a rate equivalent to from about 200 to about 2000 sccm into a 3 liter chamber; to deposit a first layer of doped polysilicon on said stepped surface; b) stopping the flow of said source of dopant into said chamber, while continuing the flow of said source of silicon into said chamber for a time period of from about 20 seconds to about 1.5 minutes to deposit a first layer of undoped polysilicon over said first layer of doped polysilicon on said stepped surface of said wafer; c) flowing into said chamber for an additional time period of from about 20 seconds to about 2 minutes: i) a source of silicon selected from the class consisting of SiH 4 and Si 2 H 6 at a flow rate equivalent to from about 100 to about 1000 sccm into a 3 liter chamber; and ii) a source of dopant selected from the class consisting of Ph 3 , B 2 H 3 , BCl 3 , and AsH 3 into said chamber at a rate equivalent to from about 200 to about 2000 sccm into a 3 liter chamber; to deposit a second layer of doped polysilicon on said stepped surface; d) again stopping the flow of said source of dopant into said chamber, while continuing the flow of said source of silicon into said chamber for an additional time period of from about 20 seconds to about 1.5 minutes to deposit a second layer of undoped polysilicon over said second layer of doped polysilicon on said stepped surface of said wafer; and e) rapidly annealing said deposited polysilicon by raising the temperature of the coated wafer to an annealing temperature of from about 850° C. to about 1000° C. by raising the temperature of said coated wafer to said annealing temperature at a rate of from about 50° C./second to about 100° C./second, and then maintaining said wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout said deposited polysilicon; whereby said deposited polysilicon will comprise a doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface on said semiconductor wafer.

Claim 20

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing into said chamber for a time period of from about 20 seconds to about 2 minutes; i) a source of silicon selected from the class consisting of SiH 4 and Si 2 H 6 at a flow rate equivalent to from about 100 to about 1000 sccm into a 3 liter chamber; and ii) a source of dopant selected from the class consisting of PH 3 , B 2 H 3 , BCl 3 , and AsH 3 into said chamber at a rate equivalent to from about 200 to about 2000 sccm into a 3 liter chamber; to deposit a first layer of doped polysilicon on said stepped surface; b) stopping the flow of said source of dopant into said chamber, while continuing the flow of said source of silicon into said chamber for a time period of from about 20 seconds to about 1.5 minutes to deposit a first layer of undoped polysilicon over said first layer of doped polysilicon on said stepped surface of said wafer; c) flowing into said chamber for an additional time period of from about 20 seconds to about 2 minutes: i) a source of silicon selected from the class consisting of SiH 4 and Si 2 H 6 at a flow rate equivalent to from about 100 to about 1000 sccm into a 3 liter chamber; and ii) a source of dopant selected from the class consisting of Ph 3 , B 2 H 3 , BCl 3 , and AsH 3 into said chamber at a rate equivalent to from about 200 to about 2000 sccm into a 3 liter chamber; to deposit a second layer of doped polysilicon on said stepped surface; d) again stopping the flow of said source of dopant into said chamber, while continuing the flow of said source of silicon into said chamber for an additional time period of from about 20 seconds to about 1.5 minutes to deposit a second layer of undoped polysilicon over said second layer of doped polysilicon on said stepped surface of said wafer; and e) rapidly annealing said deposited polysilicon by raising the temperature of the coated wafer to an annealing temperature of from about 850° C. to about 1000° C. by raising the temperature of said coated wafer to said annealing temperature at a rate of from about 50° C./second to about 100° C./second, and then maintaining said wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout said deposited polysilicon; whereby said deposited polysilicon will comprise a doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface on said semiconductor wafer.

Claim 21

The process of claim 17 wherein steps a and b are each repeated at least one additional time to increase the thickness of the deposited layer of polysilicon over said stepped wafer surface.

Claim 22

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing a source of silicon into said chamber to deposit polysilicon on said stepped surface; b) intermittently flowing a source of dopant into said chamber with said source of silicon during said deposition of said polysilicon over said stepped surface of said wafer so that portions of said polysilicon depositing on said stepped surface comprise from about 400 to about 800 Angstroms of doped polysilicon and other deposited portions comprise from about 400 to about 800 Angstroms of undoped polysilicon; c) repeating said deposition of doped and undoped polysilicon on said stepped surface until at least two undoped layers, each having a thickness of from about 400 to about 800 Angstroms, and two doped layers, each having a thickness of from about 400 to about 800 Angstroms, are intermittently formed on said stepped surface; and d) then rapidly annealing said deposited doped and undoped polysilicon at a temperature of at least about 850° C. by raising the temperature of the coated wafer to said annealing temperature at a rate of from about 50° C./second to about 100° C./second, and then maintaining the wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout the deposited polysilicon layers, whereby said deposited polysilicon layers will form a single uniformly doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface on said semiconductor wafer.

Claim 23

A process for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer in a vacuum deposition chamber which will fill low segments on the wafer surface adjacent raised portions of the wafer which comprises: a) flowing a source of silicon into said chamber to deposit polysilicon on said stepped surface; b) intermittently flowing a source of dopant into said chamber with said source of silicon during said deposition of said polysilicon over said stepped surface of said wafer so that portions of said polysilicon depositing on said stepped surface comprise from about 400 to about 800 Angstroms of doped polysilicon and other deposited portions comprise from about 400 to about 800 Angstroms of undoped polysilicon; c) repeating said deposition of doped and undoped polysilicon on said stepped surface until at least two undoped layers, each having a thickness of from about 400 to about 800 Angstroms, and two doped layers, each having a thickness of from about 400 to about 800 Angstroms, are intermittently formed on said stepped surface; and d) then rapidly annealing said deposited doped and undoped polysilicon at a temperature of at least about 850° C. by raising the temperature of the coated wafer to said annealing temperature at a rate of from about 50° C./second to about 100° C./second, and then maintaining the wafer at said annealing temperature for a period of from about 10 seconds to about 60 seconds to uniformly distribute said dopant throughout the deposited polysilicon layers, whereby said deposited polysilicon layers will form a single uniformly doped polysilicon layer having the deposition profile of an undoped polysilicon layer over said stepped surface on said semiconductor wafer.

Claim 24

The process of claim 7 wherein steps c and d are each repeated at least one additional time to increase the thickness of the deposited layer of polysilicon.