Patent US5138439A successfully refreshed from Google Patents.
US5138439A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-03-15
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Granted: 1992-08-11
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Expires: 2011-03-15
Abstract
Abstract A semiconductor device includes a successively disposed a radiating electrode and hard radiating layer at the rear surface of a semiconductor wafer substrate which is divided into a plurality of semiconductor chips wherein the semiconductor chip includes the hard radiating layer having outer dimensions larger than that of substrate of said semiconductor chip.
Inventors
- 👤 Michihiro Kobiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:55
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10W40/20; H10W40/25; H10W40/258; H10W72/00; H10W72/01; H10W72/013; H10W72/01331
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
133 words
A semiconductor device comprising: a semiconductor substrate having front and rear surfaces, and a grounding radiating electrode and an insulating radiating layer successively disposed on the rear surface of said substrate; and a carrier to which said semiconductor substrate is mounted with solder, said carrier including a recess, said insulating radiating layer and said ground radiating electrode being disposed within said recess of said carrier, said solder being disposed in the recess contacting said carrier, said grounding radiating electrode, and insulating radiating layer, said solder separating said grounding radiating electrode and said insulating radiating layer from said carrier and electrically connecting said grounding radiating electrode to said carrier wherein a via hole penetrates said semiconductor substrate and extends to said grounding radiating electrode, electrically connecting said semiconductor substrate with said grounding radiating electrode.
Claim 2
Dependent Claim
133 words
A semiconductor device comprising: a semiconductor substrate having front and rear surfaces, and a grounding radiating electrode and an insulating radiating layer successively disposed on the rear surface of said substrate; and a carrier to which said semiconductor substrate is mounted with solder, said carrier including a recess, said insulating radiating layer and said ground radiating electrode being disposed within said recess of said carrier, said solder being disposed in the recess contacting said carrier, said grounding radiating electrode, and insulating radiating layer, said solder separating said grounding radiating electrode and said insulating radiating layer from said carrier and electrically connecting said grounding radiating electrode to said carrier wherein a via hole penetrates said semiconductor substrate and extends to said grounding radiating electrode, electrically connecting said semiconductor substrate with said grounding radiating electrode.
References Cited (Backward Citations)
US3456335A
Cited
DE2042494A1
Cited
US3846824A
Cited
US3986196A
Cited
DE3132555A1
Cited
DE3115017A1
Cited
JPS5835956A
Cited
JPS5848926A
Cited
JPS58125854A
Cited
DE3314996A1
Cited
JPS59124750A
Cited
JPS6066842A
Cited
JPS59145547A
Cited
US4926242A
Cited
JPS61184859A
Cited
DE3523061A1
Cited
JPS6281047A
Cited
JPS62122157A
Cited
DE3709200A1
Cited
JPS63296361A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-11 | 1996-02-10 | 1996-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-11 | 2000-02-10 | 2000-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-11 | 2004-02-10 | 2004-08-11 | $7700.00 | Window Closed / Lapsed |