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JPS6281047A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Hitachi Ltd
•
Filing: 1985-10-04
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Granted: —
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Expires: 2005-10-04
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Abstract

Abstract PURPOSE:To miniaturize a semiconductor device restricting thermal stress on a semiconductor chip to minimum by a method wherein the semiconductor chip is fixed to a thermal stress cushioning member made of molybdenum sheet through the intermediary of a silicon base insulating sheet. CONSTITUTION:Molybdenum sheet 2 is fixed by silver brazing process 3 on the surface of heat sink 1 made of metallic base such as copper etc. and then a silicon base insulating sheet (silicon carbide) 5 both sides of which are preliminarily plated with nickel 4 is welded into the surface of molybdenum sheet 2 by high temperature soldering process. Besides, a semiconductor ship 7 is likewise welding into said insulating sheet 5 by high temperature soldering process 8. In such a constitution, the molybdenum sheet 2 is firmly fixed to the metallic base (copper) 1 having a large thermal expansion coefficient difference by silver brazing process to be formed into a structure that can withstands thermal stress.

Inventors

  • 👤 Noboru Sugiura
  • 👤 登 杉浦
  • 👤 Hideyuki Ouchi
  • 👤 秀之 大内
  • 👤 Yasuo Noto
  • 👤 康雄 能登
  • 👤 Tomiro Yasuda
  • 👤 安田 富郎

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 22:49
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/381

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