Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
165 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of a negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to from active and passive components of the power device and the control device and a pocket formed in the substrate to surround at least said first transistor of the voltage limiting circuit of the control device, said pocket being biased at a voltage depending on that of said supply voltage terminal of the power device.
Claim 2
Dependent Claim
165 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of a negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to from active and passive components of the power device and the control device and a pocket formed in the substrate to surround at least said first transistor of the voltage limiting circuit of the control device, said pocket being biased at a voltage depending on that of said supply voltage terminal of the power device.
Claim 3
Dependent Claim
12 words
The circuit of claim 1, wherein the pocket is an annular pocket.
Claim 4
Dependent Claim
153 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to form active and passive components of the power device and the control device and a pocket formed in the substrate to surround at least said first transistor of the voltage limiting circuit of the control device, said pocket being left at a floating potential.
Claim 5
Dependent Claim
153 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to form active and passive components of the power device and the control device and a pocket formed in the substrate to surround at least said first transistor of the voltage limiting circuit of the control device, said pocket being left at a floating potential.
Claim 6
Dependent Claim
12 words
The circuit of claim 3, wherein the pocket is an annular pocket.
Claim 7
Dependent Claim
174 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of a negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to form active and passive components of the power device and the control device and a pocket formed in the substrate to contain therein at least a portion of at least said first transistor of the voltage limiting circuit of the control device, said pocket being surrounded by an area of different conductivity type which has a grounded contact distributed along an emerging portion thereof.
Claim 8
Dependent Claim
174 words
A monolithic integrated circuit including a power device for driving an inductive load and a control device for said power device, said control device comprising a voltage limiting circuit essentially constituted by a first transistor responsive to negative pulses of a supply voltage and by a second transistor controlled by said first transistor for controlling re-firing of the power device in case of a negative pulse of the supply voltage during a quenching period of the power device, said monolithic integrated circuit including a substrate having a substrate surface forming a supply voltage terminal of said power device and having a substrate voltage, doped regions defined in the substrate to form active and passive components of the power device and the control device and a pocket formed in the substrate to contain therein at least a portion of at least said first transistor of the voltage limiting circuit of the control device, said pocket being surrounded by an area of different conductivity type which has a grounded contact distributed along an emerging portion thereof.
Claim 9
Dependent Claim
12 words
The circuit of claim 5, wherein the pocket is an annular pocket.