High efficiency charge pump

Claim 2

A high efficiency charge pump comprising: first and second charging transistors for delivering current to a substrate or well; first and second capacitors having a first node respectively coupled to the first and second charging transistors and a second node for respectively receiving first and second clock signals; a control circuit including first and second symmetrical halves coupled to the first and second charging transistors for discharging the first capacitor through the first charging transistor and precharging the second capacitor during a first time interval and for discharging the second capacitor through the second charging transistor and precharging the first capacitor during a second time interval; a third capacitor having a first node coupled to the first symmetrical control circuit half and a second node for receiving a third clock signal; and a fourth capacitor having a first node coupled to the second symmetrical control circuit half and a second node for receiving a fourth clock signal.

Claim 3

A high efficiency charge pump as in claim 1 in which the first and third clock signals each have a transition from a first logic state to a second logic state that occurs simultaneously at a first time instant, the second clock signal has a transition from the second logic state to the first logic state that occurs after the first time instant, and the fourth clock signal has a transition from the second logic state to the first logic state that occurs before the first time instant, and the second and fourth clock signals each have a transition from the first logic state to the second logic state that occurs simultaneously at a second time instant, the first clock signal has a transition from the second logic state to the first logic state that occurs after the second time instant, and the third clock signal has a transition from the second logic state to the first logic state that occurs before the second time instant.

Claim 6

A method for efficiently charging a substrate or well as in claim 3 further comprising the steps of: providing first, second, third, and fourth clock signals; and energizing the first, second, third, and fourth capacitors with the respective first, second, third, and fourth clock signals.

Claim 7

A method for efficiently charging a substrate or well as in claim 3 further comprising the steps of: providing first, second, third, and fourth clock signals, the first and third clock signals each having a transition from a first logic state to a second logic state that occurs simultaneously at a first time instant and the second and fourth clock signals each having a transition from the first logic state to the second logic state that occurs simultaneously at a second time instant; and energizing the first, second, third, and fourth capacitors with the respective first, second, third, and fourth clock signals.

Claim 8

A method for efficiently charging a substrate or well as in claim 3 further comprising the steps of: providing first, second, third, and fourth clock signals, the second clock signal having a transition from a first logic state to a second logic state that occurs after a first time instant, and the fourth clock signal having a transition from the first logic state to the second logic state that occurs before a first time instant, the first clock signal having a transition from the first logic state to the second logic state, that occurs after a second time instant, and the third clock signal having a transition from the first logic state to the second logic state that occurs before a second time instant; and energizing the first, second, third, and fourth capacitors with the respective first, second, third, and fourth clock signals.

Claim 9

A high efficiency charge pump comprising: first, second, third, fourth, fifth, and sixth transistors each having a gate, a first current node, and a second current node; first, second, third, and fourth capacitors each having a first node and a second node; and an output terminal for biasing a substrate or well, wherein the first current nodes of the first, second, third, and fourth transistors are coupled together and to a source of supply voltage, the second current node of the first transistor and the first current node of the fifth transistor are coupled together and to the first node of the first capacitor, the second node of the first capacitior receiving a first clock signal, the second current node of the second transistor and the first current node of the sixth transistor are coupled together and to the first node of the second capacitior, the second node of the second capacitor receiving a second clock signal, the second current node of the third transistor and the gates of the second, fourth, and fifth transistors are coupled together and to the first node of the third capacitor, the second node of the third capacitor receiving a third clock signal, the second current node of the fourth transistor and the gates of the first, third, and sixth transistors are coupled together and to the first node of the fourth capacitor, the seocnd node of the fourth capacitor receiving a fourth clock signal, and the second current nodes of the fifth and sixth transistors are coupled together and to the output terminal.

Claim 10

A high efficiency charge pump comprising: first, second, third, fourth, fifth, and sixth transistors each having a gate, a first current node, and a second current node; first, second, third, and fourth capacitors each having a first node and a second node; and an output terminal for biasing a substrate or well, wherein the first current nodes of the first, second, third, and fourth transistors are coupled together and to a source of supply voltage, the second current node of the first transistor and the first current node of the fifth transistor are coupled together and to the first node of the first capacitor, the second node of the first capacitior receiving a first clock signal, the second current node of the second transistor and the first current node of the sixth transistor are coupled together and to the first node of the second capacitior, the second node of the second capacitor receiving a second clock signal, the second current node of the third transistor and the gates of the second, fourth, and fifth transistors are coupled together and to the first node of the third capacitor, the second node of the third capacitor receiving a third clock signal, the second current node of the fourth transistor and the gates of the first, third, and sixth transistors are coupled together and to the first node of the fourth capacitor, the seocnd node of the fourth capacitor receiving a fourth clock signal, and the second current nodes of the fifth and sixth transistors are coupled together and to the output terminal.

Claim 11

A high efficiency charge pump as in claim 7 in which the first, second, third, fourth, fifth, and sixth transistors each comprise an N-channel field-effect transistor.

Claim 12

A high efficiency charge pump as in claim 7 in which the first, second, third, fourth, fifth, and sixth transistors each comprise a P-channel field-effect transistor.

Claim 13

A high efficiency charge pump as in claim 7 in which the first second, third, and fourth capacitors each comprise an N-channel, capacitor-connected field-effect transistor.

Claim 14

A high efficiency charge pump as in claim 7 in which the first, second, third, and fourth capacitors each comprise a P-channel, capacitor-connected field-effect transistor.

Claim 15

A high efficiency charge pump as in claim 7 further comprising: first, second, third, and fourth voltage clamps each having a power node coupled to the source of supply voltage and a clamping node respectively coupled to the second node of first, second, third, and fourth capacitors; and a fifth voltage clamp having a power node coupled to the source of supply voltage and a clamping node coupled to the output terminal.

Claim 16

A high efficiency charge pump as in claim 7 further comprising first and seocnd level maintenance transistor each having a gate, a first current node, and a second current node, wherein the gate of the first level maintenance transistor is coupled to the gate of the first transistor, the first current node of the first level maintenance transistor is coupled to the first current node of the fifth transistor, and the second current node of the first level maintenance transistor is coupled to the gate of the fifth transistor, and the gate of the second level maintenance transistor is coupled to the gate of the second transistor, the first current node of the second level maintenance transistor is coupled to the first current node of the sixth transistor, and the second current node of the second level maintenance transistor is coupled to the gate of the sixth transistor.

Claim 17

A high efficiency charge pump as in claim 7 further comprising: a first incremental charging diode coupled between the gate and the first current node of the fifth transistor; and a second incremental charging diode coupled between the gate and the first current node of the sixth transistor.

Claim 18

A high efficiency charge pump as in claim 7 further comprising a capacitor coupled between the output terminal and ground.

Claim 19

A high efficiency charge pump as in claim 7 in which the first and third clock signals each have a transition from a first logic state to a second logic state that occurs simultaneously at a first time instant, the second clock signal has a transition from the second logic state to the first logic state that occurs after the first instant, and the fourth clock signal has a transition from the second logic state to the first logic state that occurs before the first time instant, and the second and fourth clock signals each have a transition from the first logic state to the second logic state that occurs simultaneously at a second time instant, the first clock signal has a transition from the second logic state to the first logic state that occurs after the second time instant, and the third clock signal has a transition from the second logic state to the first logic state that occurs before the second time instant.

Claim 20

A high efficency charge pump as in claim 12 in which the first, second, third, fourth, and fifth voltage clamps each comprise an N-channel, diode-connected field-effect transistor.

Claim 21

A high efficency charge pump as in claim 12 in which the first, second, third, fourth, and fifth voltage clamps each comprise a P-channel, diode-connected field-effect transistor.

Claim 22

A high efficiency charge pump as in claim 13 in which the first and seocnd level maintenance transistors each comprise an N-channel field-effect transistor.

Claim 23

A high efficiency charge pump as in claim 13 in which the first and second level maintenance transistors each comprise a P-channel field-effect transistor.

Claim 24

A high efficiency charge pump as in claim 14 in which the first and second incremental charging diodes each comprise an N-channel, diode-connected field-effect transistor.

Claim 25

A high efficiency charge pump as in claim 14 in which the first and second incremental charging diodes each comprise a P-channel, diode-connected field-effect transistor.

Claim 26

A high efficiency charge pump as in claim 15 in which the value of the capacitor is about 300 picofarads.