Semiconductor device having organic film as interlayer insulating film for multilayer wirings

Claim 1

A semiconductor device, comprising: a semiconductor substrate which includes (a) an element region in which a plurality of semiconductor elements are formed and (b) a separate surface portion which is separate from said element region; a first wiring layer formed on said element region, said first wiring layer having gaps therein; a first organic interlayer insulating film formed on said first wiring layer and filling said gaps; a second wiring layer formed on said first organic interlayer insulating film; a plurality of openings formed in said first organic interlayer insulating film for electrically connecting predetermined portions of said first wiring layer to predetermined portions of said second wiring layer; a plurality of spaced apart electrically conductive pillars, said electrically conductive pillars being formed on said separate surface portion of said semiconductor substrate, each of said electrically conductive pillars being in the form of a rectangle or a square, the length of the short side of said rectangle or the length of the sides of said square being in the range of 3 to 10 um, wherein said electrically conductive pillars are not connected to said first wiring layer; a second organic interlayer insulating film formed between said electrically conductive pillars; and a conductive layer for electrically connecting said second wiring layer to an external circuit, said conductive layer being formed on and in contact with said electrically conductive pillars to form an electrical connection therebetween.