US5124277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of ball bonding to non-wire bonded electrodes of semiconductor devices
Assignee: Mitsubishi Electric Corp
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Filing: 1991-01-09
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Granted: 1992-06-23
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Expires: 2011-01-09
Abstract
Abstract In an internal wire bonding section of a semiconductor device, electrodes pads (e.g., Al pads) which are not connected to leads are ball-bonded with metallic balls (e.g., Au balls) to improve moisture resistance and to thereby reduce the rate of corrosion of internal portions of the semiconductor device. The operation of the semiconductor device manufacturing apparatus for ball bonding conforms to the conventional wire bonding operation, so that the existing process can be used without significantly improving the apparatus or significantly changing the semiconductor manufacturing method.
Inventors
- 👤 Kiyoaki Tsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:05
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/002; B23K20/004; B23K20/005; B23K20/007; H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/90; H10W70/00; H10W70/60; H10W72/015; H10W72/01551; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07511; H10W72/07521; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5445; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/59; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S228/00; Y10S228/904
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
225 words
A method of manufacturing a semiconductor device including a plurality of electrode pads provided on a major surface of a silicon substrate die-bonded to a die pad comprising: (a) forming a metallic ball on an end of a thin wire passing through a capillary tip by applying a high voltage between said thin wire end and a torch rod to cause an electric discharge; (b) press-bonding the metallic ball to one of the electrode pads not to be connected by a wire to an inner lead by clamping the thin wire with a clamper disposed on the opposite side of the capillary tip from the substrate by moving the capillary tip and the clamper toward the silicon substrate so that the metallic ball is moved to a selected electrode pad not connected to an inner lead and by applying a force and ultrasonic vibration from the capillary tip to attach the metallic ball to the electrode pad; (c) releasing clamping of the thin wire by the clamper and moving the clamper in a reciprocating linear direction; and (d) moving the thin wire away from the metallic ball while clamping the thin wire with the clamper to break the thin wire connected to the metallic ball, leaving a portion of the thin wire attached to the metallic ball having a length no greater than 100 microns.
Claim 2
Independent Claim
225 words
A method of manufacturing a semiconductor device including a plurality of electrode pads provided on a major surface of a silicon substrate die-bonded to a die pad comprising: (a) forming a metallic ball on an end of a thin wire passing through a capillary tip by applying a high voltage between said thin wire end and a torch rod to cause an electric discharge; (b) press-bonding the metallic ball to one of the electrode pads not to be connected by a wire to an inner lead by clamping the thin wire with a clamper disposed on the opposite side of the capillary tip from the substrate by moving the capillary tip and the clamper toward the silicon substrate so that the metallic ball is moved to a selected electrode pad not connected to an inner lead and by applying a force and ultrasonic vibration from the capillary tip to attach the metallic ball to the electrode pad; (c) releasing clamping of the thin wire by the clamper and moving the clamper in a reciprocating linear direction; and (d) moving the thin wire away from the metallic ball while clamping the thin wire with the clamper to break the thin wire connected to the metallic ball, leaving a portion of the thin wire attached to the metallic ball having a length no greater than 100 microns.
References Cited (Backward Citations)
JPS55118643A
Cited
JPS567442A
Cited
US4442967A
Cited
JPS59208751A
Cited
JPS60194543A
Cited
JPS60245239A
Cited
JPS6123329A
Cited
JPS6146036A
Cited
JPS61219159A
Cited
JPS61242045A
Cited
US4661192A
Cited
JPS62132350A
Cited
JPS62152143A
Cited
JPS62152142A
Cited
JPS62206857A
Cited
JPS62211937A
Cited
JPS62248240A
Cited
JPS63104431A
Cited
JPS63122133A
Cited
JPS63153832A
Cited
JPS63173345A
Cited
JPS63255928A
Cited
JPH01202830A
Cited
JPH01227458A
Cited
JPH01256154A
Cited
JPH01286450A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |