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JPS60245239A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device and manufacture thereof

Assignee: NEC Corp
•
Filing: 1984-05-21
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Granted: —
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Expires: 2004-05-21
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Abstract

Abstract PURPOSE:To form a bump of semiconductor element with an easy and automatic method by forming a bump on a semiconductor element for gang bonding after grinding of the wafer. CONSTITUTION:A wafer on which semiconductor elements are formed is formed to the desired thickness through etching or grinding at the rear surface. Since the semiconductor element formed to the wafer here is not provided with a bump, the wafer is not cracked during grinding of wafer due to uneven surface of bump and grinding can be realized easily and stably. Next, a metal ball 17 is formed at the end point of wire 5 of Au, Ag, Cu, etc. with electrical discharge or hydrogen flame, then the metal ball 17 is connected to the electrode terminal on the semiconductor element, thereafter it is lifted up while it is held with a holding plate 18 and the wire 5 is cut at the coupling point with the metal ball 17. Thereby, the desired bump 19 is formed on the electrode terminal of semiconductor element.

Inventors

  • 👤 Koichi Takegawa
  • 👤 光一 竹川
  • 👤 Manabu Bonshihara
  • 👤 盆子原 学

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-06 09:02
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/0711; H10W72/075; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/754; H10W90/756

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