US5124276A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Filling contact hole with selectively deposited EPI and poly silicon
Assignee: Toshiba Corp
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Filing: 1991-07-02
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Granted: 1992-06-23
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Expires: 2011-07-02
Abstract
Abstract A semiconductor device includes a semiconductor layer, an insulating layer on the semiconductor layer, including a discontinuity therein, a monocrystalline silicon layer on a portion of semiconductor layer defined by the discontinuity, a non-monocrystalline silicon layer on the monocrystalline silicon layer, and a wiring layer on the non-monocrystalline silicon layer.
Inventors
- 👤 Shuichi Samata
- 👤 Yoshiaki Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:28
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/164
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
72 words
A method of manufacturing a semiconductor device having a wiring contact portion, comprising the steps of: providing a semiconductor layer; forming an insulating layer on the semiconductor layer; forming an opening in a portion of the insulating layer; selectively forming a monocrystalline silicon layer in the opening of the insulating layer; selectively forming a non-monocrystalline silicon layer on the monocrystalline silicon layer; and forming a wiring layer on the non-monocrystalline silicon layer.
Claim 2
Independent Claim
72 words
A method of manufacturing a semiconductor device having a wiring contact portion, comprising the steps of: providing a semiconductor layer; forming an insulating layer on the semiconductor layer; forming an opening in a portion of the insulating layer; selectively forming a monocrystalline silicon layer in the opening of the insulating layer; selectively forming a non-monocrystalline silicon layer on the monocrystalline silicon layer; and forming a wiring layer on the non-monocrystalline silicon layer.
Claim 3
Independent Claim
100 words
A method of manufacturing a semiconductor device having a wiring contact portion, comprising the steps of: providing a semiconductor layer of first conductivity type; forming an impurity layer of second conductivity type in a surface area of the semiconductor layer; forming an insulating layer on the semiconductor layer; forming an opening in a portion of the insulating layer corresponding to the location of the impurity layer; selectively forming a monocrystalline silicon layer in the opening of the insulating layer; selectively forming a non-monocrystalline silicon layer on the monocrystalline silicon layer; and forming a wiring layer on the non-monocrystalline silicon layer.
Claim 4
Independent Claim
100 words
A method of manufacturing a semiconductor device having a wiring contact portion, comprising the steps of: providing a semiconductor layer of first conductivity type; forming an impurity layer of second conductivity type in a surface area of the semiconductor layer; forming an insulating layer on the semiconductor layer; forming an opening in a portion of the insulating layer corresponding to the location of the impurity layer; selectively forming a monocrystalline silicon layer in the opening of the insulating layer; selectively forming a non-monocrystalline silicon layer on the monocrystalline silicon layer; and forming a wiring layer on the non-monocrystalline silicon layer.
Claim 5
Dependent Claim
26 words
A method according to claim 2, wherein the the step of selectively forming the non-monocrystalline silicon layer includes the step of depositing a polycrystalline silicon layer.
Claim 6
Dependent Claim
38 words
A method according to claim 3, wherein the step of depositing includes forming a facet having a depth smaller than the mean grain size of the polycrystalline silicon layer on the upper surface of the monocrystalline silicon layer.
Claim 7
Dependent Claim
22 words
A method according to claim 2, wherein the step of selectively forming the non-monocrystalline silicon layer includes growing an amorphous silicon layer.
Claim 8
Dependent Claim
30 words
A method according to claim 2, wherein the step of selectively forming the monocrystalline silicon layer includes contolling the thickness of monocrystalline silicon layer to less than about 0.6 micron.
Claim 9
Dependent Claim
25 words
A method according to claim 2, further comprising introducing an impurity of second conductivity type into the monocrystalline silicon layer and the non-monocrystalline silicon layer.
Claim 10
Dependent Claim
45 words
A method according to claim 2, wherein the steps of selectively forming the monocrystalline silicon layer and the non-monocrystalline silicon layer include confining the device in an apparatus having controlled growth conditions, and modifying the growth conditions after the monocrystalline silicon layer has been formed.
Claim 11
Dependent Claim
23 words
A method according to claim 2, wherein the step of forming the monocrystalline silicon layer includes selectively epitaxially growing the monocrystalline silicon layer.
References Cited (Backward Citations)
US4965219A
Cited
US4592792A
Cited
US4749441A
Cited
US4786615A
Cited
US5010034A
Cited
US4963506A
Cited
US5045494A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |