Patent US3904390A successfully refreshed from Google Patents.
Patent US5122481A successfully refreshed from Google Patents.
US5122481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor element manufacturing process using sequential grinding and chemical etching steps
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1991-09-04
•
Granted: 1992-06-16
•
Expires: 2011-09-04
Abstract
Abstract There is disclosed a method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor element on one of major surfaces of a GaAs substrate; a grinding the substrate to make the GaAs substrate to a predetermined thickness by grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of 6 micro-meters or larger; and an chemical etching the other surface of the substrate by 0.6 micro-meters or more just after the grinding step, without any further grinding treatment done on the other surface, just after the grinding step.
Inventors
- 👤 Masanori Nishiguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:35
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P52/00; H10P54/00; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/135
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
97 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor element on one of major surfaces of a GaAs substrate; a grinding of the substrate to make the GaAs substrate to a predetermined thickness by grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of 6 micro-meters or larger; and a chemical etching of the other surface of the substrate by 0.6 micro-meters or more just after the grinding step, without any further grinding treatment done on the other surface, just after the grinding step.
Claim 2
Independent Claim
97 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor element on one of major surfaces of a GaAs substrate; a grinding of the substrate to make the GaAs substrate to a predetermined thickness by grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of 6 micro-meters or larger; and a chemical etching of the other surface of the substrate by 0.6 micro-meters or more just after the grinding step, without any further grinding treatment done on the other surface, just after the grinding step.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein said grinding step is of grinding said GaAs substrate using a diamond grinding stone.
Claim 4
Dependent Claim
37 words
A method according to claim 1, wherein said grinding step is of grinding said GaAs substrate using a diamond grinding stone of which an average grain size is larger than 6 micro-meters and smaller than 25 micro-meters.
References Cited (Backward Citations)
SU393073A1
Cited
US4226056A
Cited
US4411107A
Cited
FR2505713A1
Cited
US4587771A
Cited
US4947598A
Cited
US5035087A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-16 | 1995-12-16 | 1996-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-16 | 1999-12-16 | 2000-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-16 | 2003-12-16 | 2004-06-16 | $7700.00 | Window Closed / Lapsed |