Semiconductor integrated circuit device with improved connection pattern of signal wirings

Claim 2

A semiconductor integrated circuit device comprising: a semiconductor substrate; a plurality of basic cell columns provided on a main surface of said semiconductor substrate, each of said basic cell columns being constituted by a plurality of MISFETs; a plurality of wiring channel regions provided between said plurality of basic cell columns; first wirings along first phantom lines, said first wirings are provided in said wiring channel regions and said first phantom lines extend in a first direction; second wirings along second phantom lines, said second wirings are provided in said wiring channel regions and said second phantom lines extend in a second direction inclined by an acute angle with respect to said first direction, wherein no wirings extending in a third direction which is perpendicular to said first direction exist in said wiring channel regions; and means electrically interconnecting first and second wirings at connection portions thereof.

Claim 3

A semiconductor integrated circuit device according to claim 1, wherein said basic cell columns extend in said first direction.

Claim 4

A semiconductor integrated circuit device according to claim 2, wherein said acute angle is 60 degrees.

Claim 5

A semiconductor integrated circuit device according to claim 2, said means electrically interconnecting comprising: first connection portions provided at the ends of said first wirings; second connection portions provided at the ends of said second wirings; and connection holes provided in a first insulating film interposed between said plurality of first and second wirings, wherein said first wirings and said second wirings are electrically connected together at said first and second connection portions through the connection holes.

Claim 6

A semiconductor integrated circuit device according to claim 4, wherein at least either the first connection portions or the second connection portions have regular hexagonal shapes.

Claim 7

A semiconductor integrated circuit device according to claim 5, wherein said acute angle is 60 degrees.

Claim 8

A semiconductor integrated circuit device according to claim 4, wherein at least either the first connection portions of the second connection portions have circular shapes.

Claim 9

A semiconductor integrated circuit device according to claim 2, wherein said MISFETs have gate electrodes, source regions and drain regions, and said gate electrodes extend in said third direction which is perpendicular to said first direction.

Claim 10

A semiconductor integrated circuit device according to claim 8, wherein said acute angle is 60 degrees.

Claim 11

A semiconductor integrated circuit device according to claim 1, wherein said first and second wirings are made of aluminum.

Claim 12

A semiconductor integrated circuit device comprising: a semiconductor substrate; a plurality of basic cell columns provided on a main surface of said semiconductor substrate, said basic cell columns comprising a plurality of MISFETs; a plurality of wiring channel regions provided among the plurality of basic cell columns; a plurality of first wirings which are provided in said wiring channel regions and which extend in a first direction, wherein said first wirings have first connection portions at respective ends of said first wirings; a plurality of second wirings which are provided in said wiring channel regions and which extend in a second direction inclined by an acute angle with respect to said first direction, wherein said second wirings have second connection portions at respective ends of said second wirings; and means electrically interconnecting said first and second connection portions, wherein said first and second connection portions have regular hexagonal shapes.

Claim 13

A semiconductor integrated circuit device comprising: a semiconductor substrate; a plurality of basic cell columns provided on a main surface of said semiconductor substrate, said basic cell columns comprising a plurality of MISFETs; a plurality of wiring channel regions provided among the plurality of basic cell columns; a plurality of first wirings which are provided in said wiring channel regions and which extend in a first direction, wherein said first wirings have first connection portions at respective ends of said first wirings; a plurality of second wirings which are provided in said wiring channel regions and which extend in a second direction inclined by an acute angle with respect to said first direction, wherein said second wirings have second connection portions at respective ends of said second wirings; and means electrically interconnecting said first and second connection portions, wherein said first and second connection portions have regular hexagonal shapes.

Claim 14

A semiconductor integrated circuit device according to claim 11, wherein said acute angle is 60 degrees.

Claim 15

A semiconductor integrated circuit device according to claim 11, wherein said MISFETs have gate electrodes, source regions and drain regions, and said gate electrodes extend in a third direction which is perpendicular to said first direction.

Claim 16

A semiconductor integrated circuit device according to claim 11, wherein said first and second wirings are made of aluminum.