US4651183A — High density one device memory cell arrays

Claim 1

Independent Claim 65 words

A memory comprising a semiconductor substrate having a plurality of diffusion regions, each having a given size and a given shape, and a plurality of groups of cells, each group including four cells and each cell having a storage capacitor of substantially said given size and said given shape and a switching device coupling said storage capacitor to a respective one of said diffusion regions.

Claim 2

Dependent Claim 65 words

A memory comprising a semiconductor substrate having a plurality of diffusion regions, each having a given size and a given shape, and a plurality of groups of cells, each group including four cells and each cell having a storage capacitor of substantially said given size and said given shape and a switching device coupling said storage capacitor to a respective one of said diffusion regions.

Claim 3

Dependent Claim 77 words

A memory comprising a semiconductor substrate having a plurality of diffusion regions, and a plurality of groups of cells, each group including four cells and each cell having a storage capacitor and a switching device coupling said storage capacitor to a respective one of said diffusion regions, one of the storage capacitors of a first of said groups being disposed adjacent to and between a storage capacitor of a second and of a third group of cells.

Claim 4

Dependent Claim 77 words

A memory comprising a semiconductor substrate having a plurality of diffusion regions, and a plurality of groups of cells, each group including four cells and each cell having a storage capacitor and a switching device coupling said storage capacitor to a respective one of said diffusion regions, one of the storage capacitors of a first of said groups being disposed adjacent to and between a storage capacitor of a second and of a third group of cells.

Claim 5

Dependent Claim 87 words

A memory as set forth in claim 2 wherein said diffusion regions and said groups of cells are arranged in a plurality of columns and further including a plurality of bit/sense lines and a plurality of word lines, one of said bit/sense lines being connected to each of the diffusion regions of a respective column of said plurality of columns of diffusion regions and one of said word lines being connected to one of the switching devices of each of said plurality of columns of cell groups.

Claim 6

Dependent Claim 30 words

A memory as set forth in claim 3 wherein said bit/sense line is a metallic line and said one word line has a zigzag configuration and is made of polysilicon.

Claim 7

Dependent Claim 65 words

A memory as set forth in claim 2 wherein said plurality of word lines includes a first set of word lines and a second set of word lines, said first set of word lines being coupled to two of said four cells of each of said groups and said second set being of word lines being coupled to the remaining two of said four cells.

Claim 8

Dependent Claim 44 words

A memory as set forth in claim 5 wherein said first set of word lines are polysilicon lines arranged in a first layer over said substrate and said second set of word lines are polysilicon lines arranged in a second layer over said substrate.

Claim 9

Dependent Claim 42 words

A memory as set forth in claim 6 wherein the lines of said first set of word lines and the lines of said second set of word lines are arranged generally in parallel to each other and orthogonal to said bit/sense lines.

Claim 10

Dependent Claim 35 words

A memory as set forth in claim 6 wherein the lines of said first set of word lines are diagonal to the lines of said second set of word lines and to said bit/sense lines.

Claim 11

Dependent Claim 32 words

A memory as set forth in claim 8 wherein each of the lines of said second set of word lines includes a plurality of segments and a metallic strap interconnects said segments.

Claim 12

Dependent Claim 29 words

A memory as set forth in claim 6 wherein a plate of each of said storage capacitors is a polysilicon plate arranged in a third layer over said substrate.

Claim 13

Dependent Claim 20 words

A memory as set forth in claim 10 wherein said groups are isolated from each other by a recessed oxide.

Claim 14

Dependent Claim 121 words

A memory comprising a semiconductor substrate having a common diffusion region of a given area on the surface of said substrate disposed therein, first, second, third and fourth storage capacitors, each of said capacitors having substantially said given area on the surface of said substrate, and first, second, third and fourth switching devices coupling said first, second, third and fourth storage capacitors, respectively, to said diffusion region, said first and third capacitors and said first and third switching devices being aligned along a first axis through said common diffusion region and said second and fourth capacitors and said second and fourth switching devices being aligned along a second axis through said common diffusion region, said second axis intersecting said first axis.

Claim 15

Dependent Claim 121 words

A memory comprising a semiconductor substrate having a common diffusion region of a given area on the surface of said substrate disposed therein, first, second, third and fourth storage capacitors, each of said capacitors having substantially said given area on the surface of said substrate, and first, second, third and fourth switching devices coupling said first, second, third and fourth storage capacitors, respectively, to said diffusion region, said first and third capacitors and said first and third switching devices being aligned along a first axis through said common diffusion region and said second and fourth capacitors and said second and fourth switching devices being aligned along a second axis through said common diffusion region, said second axis intersecting said first axis.

Claim 16

Dependent Claim 62 words

A memory as set forth in claim 12 wherein said storage capacitors include storage nodes disposed within said substrate and plates made of a first layer polysilicon and said switching devices are field effect transistors having gate electrodes made of second and third layers of polysilicon and further including a bit/sense line made of a conductive metallic material contacting said diffusion region.

Claim 17

Dependent Claim 29 words

A memory as set forth in claim 13 wherein said common diffusion region and said storage nodes are N+ diffusion regions and said substrate has a P type conductivity.

Claim 18

Dependent Claim 164 words

A memory comprising a semiconductor substrate having a common diffusion region disposed therein, first, second, third and fourth storage capacitors, said storage capacitors including storage nodes disposed within said substrate and plates made of a first layer of polysilicon, said common diffusion region and said storage nodes being N+ diffusion regions and said substrate having a P type conductivity, first, second, third and fourth switching devices coupling said first, second, third and fourth storage capacitors, respectively, to said diffusion region, said switching devices being field effect transistors having gate electrodes made of second and third layers of polysilicon, said first and third capacitors and said first and third switching devices being aligned along a first axis through said common diffusion region and said second and fourth capacitors and said second and fourth switching devices being aligned along a second axis through said common diffusion region orthogonal to said first axis, and a bit/sense line made of a conductive metallic material contacting said diffusion region.

Claim 19

Dependent Claim 164 words

A memory comprising a semiconductor substrate having a common diffusion region disposed therein, first, second, third and fourth storage capacitors, said storage capacitors including storage nodes disposed within said substrate and plates made of a first layer of polysilicon, said common diffusion region and said storage nodes being N+ diffusion regions and said substrate having a P type conductivity, first, second, third and fourth switching devices coupling said first, second, third and fourth storage capacitors, respectively, to said diffusion region, said switching devices being field effect transistors having gate electrodes made of second and third layers of polysilicon, said first and third capacitors and said first and third switching devices being aligned along a first axis through said common diffusion region and said second and fourth capacitors and said second and fourth switching devices being aligned along a second axis through said common diffusion region orthogonal to said first axis, and a bit/sense line made of a conductive metallic material contacting said diffusion region.

Claim 20

Dependent Claim 124 words

A memory array comprising a semiconductor substrate and first and second groups of cells, each of said groups including a diffusion region formed in said substrate, first, second, third and fourth storage nodes and switching means for selectively coupling said storage nodes to the associated diffusion region, said first and third storage node of said first group and said fourth storage node of said second group being aligned along a first axis through the diffusion region of said first group and said first and third storage nodes of said second group and said second storage node of said first group being aligned along a second axis through the diffusion region of said second group, said first and second axes being parallel to each other.

Claim 21

Dependent Claim 124 words

A memory array comprising a semiconductor substrate and first and second groups of cells, each of said groups including a diffusion region formed in said substrate, first, second, third and fourth storage nodes and switching means for selectively coupling said storage nodes to the associated diffusion region, said first and third storage node of said first group and said fourth storage node of said second group being aligned along a first axis through the diffusion region of said first group and said first and third storage nodes of said second group and said second storage node of said first group being aligned along a second axis through the diffusion region of said second group, said first and second axes being parallel to each other.

Claim 22

Dependent Claim 68 words

A memory as set forth in claim 16 further including a bit/sense line connected between the diffusion regions of said first and second groups and wherein said switching means includes first, second, third and fourth word lines for selectively coupling a respective one of said first, second, third and fourth storage nodes of one of said first and second groups to the diffusion region of said one group.

Claim 23

Dependent Claim 53 words

A memory as set forth in claim 16 wherein said switching means includes first, second, third and fourth field effect transistors disposed between said first, second, third and fourth storage nodes, respectively, of said one group and the diffusion region of said one group, and said storage nodes are disposed within said substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-03-16	1990-09-15	1991-03-17	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-03-16	1994-09-15	1995-03-17	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-03-16	1998-09-15	1999-03-17	$7700.00	Window Closed / Lapsed

High density one device memory cell arrays

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