Patent US5116779A successfully refreshed from Google Patents.
US5116779A
Expired / Lapsed
US
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Process for forming semiconductor device isolation regions
Assignee: Sharp Corp
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Filing: 1991-02-20
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Granted: 1992-05-26
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Expires: 2011-02-20
Abstract
Abstract A process for forming a semiconductor device isolation region which comprises: a) forming on a silicon substrate at least a first thin silicon oxide film and a first silicon nitride film thereon, b) etching the substrate using a resist pattern to form a trench for providing an isolation region, c) forming a second silicon oxide film and a second silicon nitride film on the side walls and bottom wall of the trench, d) subsequently forming a first polycrystalline silicon film on the substrate including the trench, leaving the first polycrystalline silicon film only on the side walls of the trench by anisotropic etching and thereafter oxidizing the remaining first polycrystalline silicon film to form an oxide film on the side walls of the trench, and e) further forming a second polycrystalline silicon film over the semiconductor substrate including the trench, leaving the second polycrystalline silicon film only between the oxide film portions on the side walls of the trench by anisotropic etching and thereafter oxidizing the remaining second polycrystalline silicon film to thereby form an oxide film.
Inventors
- 👤 Katsuji Iguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:57
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/40; H10P; H10P14/00; H10P14/60; H10P14/61; H10W10/01; H10W10/011; H10W10/012; H10W10/041; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
199 words
A process for simultaneously forming semiconductor device isolation regions having various widths which comprises: a) forming on a silicon substrate at least a first thin silicon oxide film and a first silicon nitride film thereon, b) etching the substrate to form a trench for providing a narrow isolation region, forming a second silicon oxide film and a second silicon nitride film on the side walls and bottom wall of the trench, subsequently forming a first polycrystalline silicon film on the substrate including the trench, leaving the first polycrystalline siliconfilm only on the side walls of the trench by anisotropic etching, and thereafter oxidizing the remaining first polycrystalline silicon film to form an oxide film on the side walls of the trench, further forming a second polycrystalline silicon film over the semiconductor substrate including the trench, leaving the second polycrystalline silicon film only between the oxide film portions on the side walls of the trench by anisotropic etching, c) etching the part of said first silicon nitride film which will form a wide isolation region, and d) thereafter simultaneously oxidizing both the remaining second polycrystalline silicon film and said etched part of the siliconnitride film to thereby form oxide films.
Claim 2
Dependent Claim
199 words
A process for simultaneously forming semiconductor device isolation regions having various widths which comprises: a) forming on a silicon substrate at least a first thin silicon oxide film and a first silicon nitride film thereon, b) etching the substrate to form a trench for providing a narrow isolation region, forming a second silicon oxide film and a second silicon nitride film on the side walls and bottom wall of the trench, subsequently forming a first polycrystalline silicon film on the substrate including the trench, leaving the first polycrystalline siliconfilm only on the side walls of the trench by anisotropic etching, and thereafter oxidizing the remaining first polycrystalline silicon film to form an oxide film on the side walls of the trench, further forming a second polycrystalline silicon film over the semiconductor substrate including the trench, leaving the second polycrystalline silicon film only between the oxide film portions on the side walls of the trench by anisotropic etching, c) etching the part of said first silicon nitride film which will form a wide isolation region, and d) thereafter simultaneously oxidizing both the remaining second polycrystalline silicon film and said etched part of the siliconnitride film to thereby form oxide films.
Claim 3
Dependent Claim
42 words
A process of claim 1 in which in the step (a), the first thin silicon oxide film is formed by oxidizing the silicon substrate and a silicon oxide film is further formed on the first silicon nitride film by a CVD method.
Claim 4
Dependent Claim
31 words
A process of claim 2 in which in the step (a), a polycrystalline silicon film is further formed between the first thin silicon oxide film and the first silicon nitride film.
Claim 5
Dependent Claim
23 words
A process of claim 1 in, which the second silicon nitride film of the step (b) is formed by a LP CVD method.
Claim 6
Dependent Claim
25 words
A process of claim 1 in which the thickness of the first polycrystalline silicon film is about one-fourth of a minimum width of the trench.
Claim 7
Dependent Claim
39 words
A process of claim 1 in which the thickness of the second polycrystalline silicon film of the step (b) is one-half or more of a maximum width between the oxide film portions on the side walls of the trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |