US5115443A
Expired / Lapsed
US
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Semiconductor laser apparatus
Assignee: Canon Inc
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Filing: 1989-03-22
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Granted: 1992-05-19
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Expires: 2009-03-22
Abstract
Abstract In a semiconductor laser apparatus of the invention, a semiconductor layer as a substrate on which various semiconductor layers are laminated has a groove or projection having a trapezoidal cross section which extends in the direction of a resonator, and at least one of the semiconductor layers locating on the upstream side of the active layer on a path of a current flowing when a forward bias voltage is applied to electrodes contains p or n type impurity.
Inventors
- 👤 Seiichi Miyazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:43
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/30; H01S5/305; H10H20/811; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H01S5/2231; H01S5/2234; H01S5/2237; H01S5/3077; H01S5/3081; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
152 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a groove with a trapezoid shape, said substrate comprising a p type semiconductor, the width of said groove falling in the range of 3 to 10 μm; a buffer layer comprising a semiconductor containing p and n type impurity, formed on said substrate, in said buffer layer a portion formed on an oblique surface of said groove having a p type polarity and the other portion having n type polarity; a first clad layer comprising a p type semiconductor formed on said buffer layer; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a n type semiconductor formed on said active layer; a n type electrode formed on said second clad layer; and a p type electrode formed on the bottom surface of said substrate.
Claim 2
Dependent Claim
152 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a groove with a trapezoid shape, said substrate comprising a p type semiconductor, the width of said groove falling in the range of 3 to 10 μm; a buffer layer comprising a semiconductor containing p and n type impurity, formed on said substrate, in said buffer layer a portion formed on an oblique surface of said groove having a p type polarity and the other portion having n type polarity; a first clad layer comprising a p type semiconductor formed on said buffer layer; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a n type semiconductor formed on said active layer; a n type electrode formed on said second clad layer; and a p type electrode formed on the bottom surface of said substrate.
Claim 3
Dependent Claim
44 words
A semiconductor laser apparatus according to claim 1, wherein said groove is formed along a axis on a (001) plane of said substrate, and the oblique surface of said groove defines an angle of 20 ° to 25° with respect to the (001) plane.
Claim 4
Dependent Claim
21 words
A semiconductor laser apparatus according to claim 1, further comprising a light guide layer provided in contact with said active layer.
Claim 5
Dependent Claim
27 words
A semiconductor laser apparatus according to claim 1, further comprising a contact layer comprising a n-type semiconductor formed between said second clad layer and said n-type electrode.
Claim 6
Dependent Claim
34 words
A semiconductor laser apparatus according to claim 1, wherein said active layer has a multilayer quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated.
Claim 7
Dependent Claim
150 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a groove with a trapezoid shape, said substrate comprising a p-type semiconductor, the width of said groove falling in the range of 3 to 10 μm; a first clad layer comprising a semiconductor containing a p- and n-type impurity, formed on said substrate, in said first clad layer a portion formed on an oblique surface of said groove has a p-type polarity and the other portion thereof has a n-type polarity; a second clad layer comprising a p-type semiconductor formed on said first clad layer; an active layer comprising a non-doped semiconductor formed on said second clad layer; a third clad layer comprising a n-type semiconductor formed on said active layer; a n-type electrode formed on said third clad layer; and a p-type electrode formed on the bottom surface of said substrate.
Claim 8
Dependent Claim
150 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a groove with a trapezoid shape, said substrate comprising a p-type semiconductor, the width of said groove falling in the range of 3 to 10 μm; a first clad layer comprising a semiconductor containing a p- and n-type impurity, formed on said substrate, in said first clad layer a portion formed on an oblique surface of said groove has a p-type polarity and the other portion thereof has a n-type polarity; a second clad layer comprising a p-type semiconductor formed on said first clad layer; an active layer comprising a non-doped semiconductor formed on said second clad layer; a third clad layer comprising a n-type semiconductor formed on said active layer; a n-type electrode formed on said third clad layer; and a p-type electrode formed on the bottom surface of said substrate.
Claim 9
Dependent Claim
43 words
A semiconductor laser apparatus according to claim 6, wherein said groove is formed along a axis on a (001) plan of said substrate, and the oblique surface of said groove defines an angle of 20° to 25° with respect to the (001) plane.
Claim 10
Dependent Claim
22 words
A semiconductor laser apparatus according to claim 6, further comprising a buffer layer formed between said substrate and said first clad layer.
Claim 11
Dependent Claim
48 words
A semiconductor laser apparatus according to claim 8, wherein said buffer layer comprising a semiconductor containing a p- and n-type impurity, and in said buffer layer a portion formed on the oblique surface of said groove has a p-type polarity and the other portion has a n-type polarity.
Claim 12
Dependent Claim
27 words
A semiconductor laser apparatus according to claim 6, further comprising a contact layer comprising a n-type semiconductor formed between said third clad layer and said n-type electrode.
Claim 13
Dependent Claim
34 words
A semiconductor laser apparatus according to claim 6, wherein said active layer has a multilayer quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated.
Claim 14
Dependent Claim
135 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a projection with a trapezoid shape, said substrate comprising a n-type semiconductor; a first clad layer comprising a n-type semiconductor formed on said substrate; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a p-type semiconductor formed on said active layer; a current blocking layer comprising a semiconductor containing a p- and n-type impurity, formed on said second clad layer, in said current blocking layer a portion formed on an oblique surface of said projection has a p-type polarity and the other portion has a n-type polarity; a p-type electrode formed on said current blocking layer; and a n-type electrode formed on the bottom surface of said substrate.
Claim 15
Dependent Claim
135 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a projection with a trapezoid shape, said substrate comprising a n-type semiconductor; a first clad layer comprising a n-type semiconductor formed on said substrate; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a p-type semiconductor formed on said active layer; a current blocking layer comprising a semiconductor containing a p- and n-type impurity, formed on said second clad layer, in said current blocking layer a portion formed on an oblique surface of said projection has a p-type polarity and the other portion has a n-type polarity; a p-type electrode formed on said current blocking layer; and a n-type electrode formed on the bottom surface of said substrate.
Claim 16
Dependent Claim
44 words
A semiconductor laser apparatus according to claim 12, wherein said projection is formed along a axis on a (001) plane of said substrate, and the oblique surface of said projection defines an angle of 20 ° to 25° with respect to the (001) plane.
Claim 17
Dependent Claim
23 words
A semiconductor laser apparatus according to claim 12, further comprising a contact layer formed between said current blocking layer and said p-type electrode.
Claim 18
Dependent Claim
48 words
A semiconductor laser apparatus according to claim 14, wherein said contact layer comprises a semiconductor containing a p- and n-type impurity, and in said contact layer a portion formed on the oblique surface of said projection has a p-type polarity and the other portion has a n-type polarity.
Claim 19
Dependent Claim
62 words
A semiconductor laser apparatus according to claim 12, further comprising a third clad layer comprising a semiconductor containing a p- and n-type impurity, formed between said first clad layer and said active layer, and wherein in said third clad layer a portion formed on the oblique surface of said projection has a p-type polarity and the other portion has a n-type polarity.
Claim 20
Dependent Claim
28 words
A semiconductor laser apparatus according to claim 16, further comprising a light guide layer comprising a n-type semiconductor formed between said third clad layer and said active layer.
Claim 21
Dependent Claim
34 words
A semiconductor laser apparatus according to claim 12, wherein said active layer has a multilayer quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated.
Claim 22
Dependent Claim
132 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a projection with a trapezoid shape, said substrate comprising a n-type semiconductor; a first clad layer comprising a n-type semiconductor formed on said substrate; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a p-type semiconductor formed on said active layer; a contact layer comprising a semiconductor containing a p- and n-type impurity formed on said second clad layer, in said contact layer a portion formed on the oblique surface of said projection having a p-type polarity and the other portion having a n-type polarity; a p-type electrode formed on said contact layer; and a n-type electrode formed on the bottom surface of said substrate.
Claim 23
Dependent Claim
132 words
A semiconductor laser apparatus comprising: a substrate in which a cross section extending in a resonant direction has a projection with a trapezoid shape, said substrate comprising a n-type semiconductor; a first clad layer comprising a n-type semiconductor formed on said substrate; an active layer comprising a non-doped semiconductor formed on said first clad layer; a second clad layer comprising a p-type semiconductor formed on said active layer; a contact layer comprising a semiconductor containing a p- and n-type impurity formed on said second clad layer, in said contact layer a portion formed on the oblique surface of said projection having a p-type polarity and the other portion having a n-type polarity; a p-type electrode formed on said contact layer; and a n-type electrode formed on the bottom surface of said substrate.
Claim 24
Dependent Claim
43 words
A semiconductor laser apparatus according to claim 19, wherein said projection is formed along a axis on (001) plane of said substrate, and the oblique surface of said projection defines an angle of 20 ° to 25° with respect to the (001) plane.
Claim 25
Dependent Claim
34 words
A semiconductor laser apparatus according to claim 19, wherein said active layer has a multilayer quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-19 | 1995-11-18 | 1996-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-19 | 1999-11-18 | 2000-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-19 | 2003-11-18 | 2004-05-19 | $7700.00 | Window Closed / Lapsed |