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US5111435A
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Bipolar-CMOS semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1991-02-08
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Granted: 1992-05-05
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Expires: 2011-02-08
Abstract
Abstract A semiconductor memory device of the composite type comprising bipolar and MOS transistors includes a memory cell array comprising MOS type memory cells arranged in a matrix manner, plural pairs of bit lines for connecting the MOS type memory cells in a column direction, and a plurality of bipolar transistors provided on the bit lines, respectively wherein the bases thereof are connected to the bit lines and the emitters thereof are commonly connected. This device further includes a constant current source connected to the common junction of the emitters of the plurality of bipolar transistors, and a column select unit for selecting of the MOS type memory cells in the column direction by allowing potentials on the bit lines of a pair to be selected of the plural pairs of bit lines to be different from those on the bit lines of non-selected pairs. In addition, this device includes row select means for selecting the MOS type memory cells in a row direction by allowing potentials on the bases of second bipolar transistors connected to word lines to be selected of a plurality of word lines to be different from those on the basis of the second bipolar transistors connected to non-selected word lines. Thus, a semiconductor memory device with low power dissipation and operable at a high speed is realized.
Inventors
- 👤 Junichi Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:22
CPC Classifications
H; H10; H10B; H10B10/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/418; G11C11/419
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
131 words
A semiconductor memory device comprising: a memory cell array comprising MOS type memory cells arranged in a matrix manner; a plurality of bit line pairs for connecting respective ones of said MOS type memory cells in a column direction; a plurality of bipolar transistors connected to said bit line pairs, respectively, the bases thereof being connected to corresponding ones of said bit lines, the emitters thereof being commonly connected; a constant current source being connected to the common connection of said emitters of said plurality of bipolar transistors; and column select means for selecting one column of MOS type memory cells by raising or lowering potentials on the bit lines of a selected pair of said plural pairs of bit lines from those on the bit lines of non-selected pairs thereof.
Claim 2
Dependent Claim
131 words
A semiconductor memory device comprising: a memory cell array comprising MOS type memory cells arranged in a matrix manner; a plurality of bit line pairs for connecting respective ones of said MOS type memory cells in a column direction; a plurality of bipolar transistors connected to said bit line pairs, respectively, the bases thereof being connected to corresponding ones of said bit lines, the emitters thereof being commonly connected; a constant current source being connected to the common connection of said emitters of said plurality of bipolar transistors; and column select means for selecting one column of MOS type memory cells by raising or lowering potentials on the bit lines of a selected pair of said plural pairs of bit lines from those on the bit lines of non-selected pairs thereof.
Claim 3
Dependent Claim
90 words
A semiconductor device as set forth in claim 1, which further comprises: a first sense line for commonly connecting the collectors of said bipolar transistors which are connected to a predetermined bit line in each of said bit line pairs; a second sense line for commonly connecting the collectors of said bipolar transistors which are connected to the other bit line in each of said bit line pairs; and sense means for sensing a difference between a voltage on said first sense line and that on said second sense line.
Claim 4
Dependent Claim
108 words
A semiconductor memory device as set forth in claim 2, wherein said sense means comprises: a pair of bipolar transistors, the bases thereof being commonly connected, the emitters thereof being respectively connected to said first and second sense lines; a pair of constant current sources connected to said emitters of said pair of bipolar transistors; and a pair of loads respectively connected to the collectors of said pair of bipolar transistors in said sense means to sense a difference between a potential on said first sense line and that on said second sense line by a difference between potentials on said collectors of said pair of bipolar transistors.
Claim 5
Dependent Claim
102 words
A semiconductor memory device as set forth in claim 1, which further comprises: a plurality of word lines for connecting said MOS type memory cells in a row direction; a plurality of second bipolar transistors connected to said word lines, respectively, the emitters thereof being connected to corresponding word lines; and row select means for selecting one row of MOS type memory cells by allowing potentials on bases of said second bipolar transistors connected to selected word lines of said plurality of word lines to be different from those on the bases of said second bipolar transistors connected to non-selected word lines.
Claim 6
Dependent Claim
91 words
A semiconductor memory device as set forth in claim 4, which further comprises: a first sense line for commonly connecting the collectors of said bipolar transistors which are connected to a predetermined bit line in each of said bit line pairs; a second sense line for commonly connecting the collectors of said bipolar transistors which are connected to the other bit line in each of said bit line pairs; and sense means for sensing a difference between a voltage on said first sense line and that on said second sense line.
Claim 7
Dependent Claim
108 words
A semiconductor memory device as set forth in claim 5, wherein said sense means comprises: a pair of bipolar transistors, the bases thereof being commonly connected, the emitters thereof being respectively connected to said first and second sense lines; a pair of constant current sources connected to said emitters of said pair of bipolar transistors; and a pair of loads respectively connected to the collectors of said pair of bipolar transistors in said sense means to sense a difference between a potential on said first sense line and that on said second sense line by a difference between potentials on said collectors of said pair of bipolar transistors.
Claim 8
Dependent Claim
27 words
A semiconductor memory device as set forth in claim 4, which further comprises discharge means connected to said word lines to discharge potentials on said word lines.
Claim 9
Dependent Claim
91 words
A semiconductor memory device as set forth in claim 7, which further comprises: a first sense line for commonly connecting the collectors of said bipolar transistors which are connected to a predetermined bit line in each of said bit line pairs; a second sense line for commonly connecting the collectors of said bipolar transistors which are connected to the other bit line in each of said bit line pairs; and sense means for sensing a difference between a voltage on said first sense line and that on said second sense line.
Claim 10
Dependent Claim
108 words
A semiconductor memory device as set forth in claim 8, wherein said sense means comprises: a pair of bipolar transistors, the bases thereof being commonly connected, the emitters thereof being respectively connected to said first and second sense lines; a pair of constant current sources connected to said emitters of said pair of bipolar transistors; and a pair of loads respectively connected to the collectors of said pair of bipolar transistors in said sense means to sense a difference between a potential on said first sense line and that on said second sense line by a difference between potentials on said collectors of said pair of bipolar transistors.
References Cited (Backward Citations)
US4658159A
Cited
US4616342A
Cited
US4604533A
Cited
US4665505A
Cited
US4713796A
Cited
US4829479A
Cited
US4727517A
Cited
US4853899A
Cited
US4825413A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |