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US5102825A
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Method of making an ion-implanted planar-buried-heterostructure diode laser
Assignee: United States Department of Energy
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Filing: 1991-03-28
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Granted: 1992-04-07
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Expires: 2011-03-28
Abstract
Abstract Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
Inventors
- 👤 Thomas M. Brennan
- 👤 Burrell E. Hammons
- 👤 David R. Myers
- 👤 Gregory A. Vawter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:38
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2054; H01S5/2059; H01S5/2275; H01S5/30; H01S5/32; H01S5/3211; H01S5/3215; H01S5/34; H01S5/3409; H01S5/3428; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
131 words
A method of fabricating a buried heterojunction laser diode comprising the steps of: providing a heterostructure including a single quantum well or multi-quantum well active layer vertically confined between a p-type cladding layer and an n-type cladding layer; and impurity disordering the heterostructure to delineate an active laser stripe, the step of impurity disordering the heterostructure including the steps of implanting a first chemical species into the heterostructure to create a first impurity disordered region within at least a portion of the active layer and one of the cladding layers; implanting a second chemical species into the heterostructure to create a second impurity disordered region within at least a portion of the active layer and the other one of the cladding layers; and activating the first and the second chemical species.
Claim 2
Independent Claim
131 words
A method of fabricating a buried heterojunction laser diode comprising the steps of: providing a heterostructure including a single quantum well or multi-quantum well active layer vertically confined between a p-type cladding layer and an n-type cladding layer; and impurity disordering the heterostructure to delineate an active laser stripe, the step of impurity disordering the heterostructure including the steps of implanting a first chemical species into the heterostructure to create a first impurity disordered region within at least a portion of the active layer and one of the cladding layers; implanting a second chemical species into the heterostructure to create a second impurity disordered region within at least a portion of the active layer and the other one of the cladding layers; and activating the first and the second chemical species.
Claim 3
Dependent Claim
21 words
A method as set forth in claim 1 wherein the step of activating includes a step of thermally annealing the heterostructure.
Claim 4
Dependent Claim
39 words
A method as set forth in claim 1 wherein the step of activating includes a step of forming a p-n junction between each of the impurity disordered regions and adjacent material of an associated one of the cladding layers.
Claim 5
Dependent Claim
47 words
A method as set forth in claim 1 wherein each of the steps of implanting includes an initial step of selecting the chemical species to cause, when activated, the associated disordered region to have an opposite type of electrical conductivity from that of the associated cladding layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |