US5101255A
Expired / Lapsed
US
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Amorphous photoelectric conversion device with avalanche
Assignee: Individual
•
Filing: 1989-07-24
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Granted: 1992-03-31
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Expires: 2009-07-24
Abstract
Abstract Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.
Inventors
- 👤 Sachio Ishioka
- 👤 Yukio Takasaki
- 👤 Tadaaki Hirai
- 👤 Kazutaka Tsuji
- 👤 Tatsuo Makishima
- 👤 Yasuhiko Nonaka
- 👤 Tatsuro Kawamura
- 👤 Takashi Yamashita
- 👤 Kazuhisa Taketoshi
- 👤 Keiichi Shidara
- 👤 Fumihiko Ando
- 👤 Kenkichi Tanioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:13
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/121; H10F30/00; H10F30/10; H10F30/15
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
99 words
A photoelectric conversion device for imaging, comprising: a substrate having a signal-reading scanning circuit thereon; a photoconductive region for generating image signals in accordance with external photo image signals, by photoelectric conversion therein, the photoconductive region being formed on said substrate and having an amorphous semiconductor layer for multiplying the image signals through avalanche multiplication, the avalanche multiplication being caused in the inside of the amorphous semiconductor layer; a conductive layer formed on said photoconductive region; and means for applying an external electric field to the photoconductive region so as to induce avalanche multiplication in the amorphous semiconductor layer.
Claim 2
Dependent Claim
99 words
A photoelectric conversion device for imaging, comprising: a substrate having a signal-reading scanning circuit thereon; a photoconductive region for generating image signals in accordance with external photo image signals, by photoelectric conversion therein, the photoconductive region being formed on said substrate and having an amorphous semiconductor layer for multiplying the image signals through avalanche multiplication, the avalanche multiplication being caused in the inside of the amorphous semiconductor layer; a conductive layer formed on said photoconductive region; and means for applying an external electric field to the photoconductive region so as to induce avalanche multiplication in the amorphous semiconductor layer.
Claim 3
Dependent Claim
15 words
A photoelectric conversion device as claimed in claim 1, wherein said conductive layer is transparent.
Claim 4
Dependent Claim
17 words
A photoelectric conversion device as claimed in claim 1, wherein said amorphous semiconductor layer includes amorphous selenium.
Claim 5
Dependent Claim
27 words
A photoelectric conversion device as claimed in claim 3, wherein said photoconductive region contains at least one of arsenic and germanium in addition to the amorphous selenium.
Claim 6
Dependent Claim
21 words
A photoelectric conversion device as claimed in claim 3, wherein said photoconductive region contains tellurium in addition to the amorphous selenium.
Claim 7
Dependent Claim
22 words
A photoelectric conversion device as claimed in claim 1, wherein said amorphous semiconductive layer consists of a plurality of amorphous semiconductor sublayers.
Claim 8
Dependent Claim
38 words
A photoelectric conversion device as claimed in claim 6, wherein said plurality of amorphous semiconductor sub-layers have at least an amorphous semiconductor sub-layer including an amorphous selenium layer and an amorphous semiconductor sub-layer including an amorphous silicon layer.
Claim 9
Dependent Claim
16 words
A photoelectric conversion device as claimed in claim 7, wherein said amorphous silicon layer contains hydrogen.
Claim 10
Dependent Claim
48 words
A photoelectric conversion device as claimed in claim 1, wherein the means for applying an external electric field is a means for applying an external electric field that is sufficiently strong such that a gain in signal current, of the electric signals, of more than one is achieved.
Claim 11
Dependent Claim
20 words
A photoelectric conversion device as claimed in claim 1, wherein the conductive layer is a counter electrode of the device.
Claim 12
Dependent Claim
37 words
A photoelectric conversion device as claimed in claim 10, wherein the means for applying an external electric field is a means for applying the external electric field between the at least one electrode and the conductive layer.
Claim 13
Dependent Claim
58 words
A photoelectric conversion device as claimed in claim 11, wherein the device is adapted to have light irradiated on the substrate or the conductive layer, and the external electric field applying means is a means for applying an external electric field such that the substrate or conductive layer, which is irradiated with light, has a positive electric potential.
Claim 14
Dependent Claim
25 words
A photoelectric conversion device as claimed in claim 1, wherein the amorphous semiconductor layer made of amorphous semiconductor material has a thickness of 0.5-6 μm.
Claim 15
Dependent Claim
39 words
A photoelectric conversion device as claimed in claim 1, wherein an insulating layer is provided as part of said substrate so as to flatten the surface upon which the at least one electrode for reading electric signals is formed.
Claim 16
Dependent Claim
34 words
A photoelectric conversion device as claimed in claim 1, further comprising blocking means for preventing carriers from being injected from the conductive layer into the photoconductive region so as to keep dark current small.
Claim 17
Dependent Claim
19 words
A photoelectric conversion device as claimed in claim 1, wherein the substrate has electrodes for reading the image signals.
Claim 18
Dependent Claim
34 words
A photoelectric conversion device as claimed in claim 16, wherein said conductive layer and said photoconductive region have a blocking contact structure for preventing carriers being injected from said electrodes into the photoconductive region.
Claim 19
Dependent Claim
33 words
A photoelectric conversion device as claimed in claim 16, wherein said photoconductive region has a blocking layer for preventing carriers being injected from said electrodes into the photoconductive region contacting said conductive layer.
Claim 20
Dependent Claim
67 words
A photoelectric conversion device of a solid-state image pickup, comprising: a photoconductive region having an amorphous semiconductor layer for multiplying image signals which are converted in the photoconductive region from external photo image signals, through avalanche multiplication caused in the amorphous semiconductor layer; and means for applying an external electric field to the photoconductive region so as to induce the avalanche multiplication in the amorphous semiconductor layer.
Claim 21
Dependent Claim
67 words
A photoelectric conversion device of a solid-state image pickup, comprising: a photoconductive region having an amorphous semiconductor layer for multiplying image signals which are converted in the photoconductive region from external photo image signals, through avalanche multiplication caused in the amorphous semiconductor layer; and means for applying an external electric field to the photoconductive region so as to induce the avalanche multiplication in the amorphous semiconductor layer.
Claim 22
Dependent Claim
45 words
A photoelectric conversion device of a solid-state image pickup as claimed in claim 19, further comprising blocking means for preventing carriers from being injected into the photoconductive region so as to keep dark current small while gain of the image signals is larger than unity.
References Cited (Backward Citations)
JPS4924619A
Cited
JPS52144992A
Cited
US4219831A
Cited
US4360821A
Cited
US4323912A
Cited
US4429325A
Cited
US4381517A
Cited
EP0040076A2
Cited
JPS5721876A
Cited
JPS5765652A
Cited
US4445131A
Cited
JPS58130578A
Cited
US4581476A
Cited
JPS61222383A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |