US4323912A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device
Assignee: Hitachi Ltd
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Filing: 1980-05-23
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Granted: 1982-04-06
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Expires: 2000-05-23
Abstract
Abstract In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
Inventors
- 👤 Norio Koike
- 👤 Toshihisa Tsukada
- 👤 Haruhisa Ando
- 👤 Hideaki Yamamoto
- 👤 Tadaaki Hirai
- 👤 Masaharu Kubo
- 👤 Eiichi Maruyama
- 👤 Toru Baji
- 👤 Yukio Takasaki
- 👤 Shusaku Nagahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:06
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
144 words
In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
Claim 2
Dependent Claim
144 words
In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
Claim 3
Dependent Claim
43 words
A solid-state imaging device as defined in claim 1, wherein the light entrance side region of said photoconductive film is biased positively with respect to the opposite side region thereof, and said each switching element is an N-channel element whose carriers are electrons.
Claim 4
Dependent Claim
43 words
A solid-state imaging device as defined in claim 1, wherein the light entrance side region of said photoconductive film is biased negatively with respect to the opposite side region thereof, and said each switching element is a P-channel element whose carriers are holes.
Claim 5
Dependent Claim
31 words
A solid-state imaging device as defined in claim 1, 2 or 3, wherein said each switching element is either of an insulated-gate field effect transistor and a charge transfer device (CTD).
Claim 6
Dependent Claim
49 words
A solid-state imaging device as defined in claim 1, wherein said photoconductive film is a Se-As-Te amorphous film, the light entrance side region of said photoconductive film is biased positively with respect to the opposite side region thereof, and said each switching element is an N-channel field effect transistor.
References Cited (Backward Citations)
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US4143389A
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US4148051A
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US4223330A
Cited
US4236829A
Cited
US4268845A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-04-05 | 1985-10-05 | 1986-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-04-05 | 1989-10-05 | 1990-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-04-05 | 1993-10-05 | 1994-04-06 | $7700.00 | Window Closed / Lapsed |