US4236829A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state image sensor
Assignee: Panasonic Holdings Corp
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Filing: 1979-01-24
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Granted: 1980-12-02
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Expires: 1999-01-24
Abstract
Abstract A solid-state image sensor is provided, which has a high spectral response over the whole visible light range and wherein a photoconductor layer having a hetero-junction defined by a hole blocking layer and a layer consisting of a system (Zn1-xCdxTe)1-y(In2Te3)y is formed over a semiconductor substrate which has charge transfer type unit cells or X-Y switching matrix type unit cells.
Inventors
- 👤 Takao Chikamura
- 👤 Shinji Fujiwara
- 👤 Yasuaki Terui
- 👤 Masakazu Fukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:25
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
213 words
A solid-state image sensor, comprising: a semiconductor substrate having a region of a first conductivity type and one or more regions of a second opposite conductivity type, said regions extending to a major surface of said substrate; an insulating layer formed over said major surface of said semiconductor substrate leaving exposed one portion of said region of said second conductivity type; a first electrode disposed on said insulating layer and extending to overlie and make electrical contact with said region of said second conductivity type; an n-type semiconductor layer overlying said insulating layer and overlying and in electrical contact with said first electrode; a film disposed on said n-type semiconductor layer so as to form a heterojunction therewith and comprising (Zn 1-x Cd x Te) 1-y (In 2 Te 3 ) y , where 0<x<1 and 0<y<0.3; a second electrode formed on said (Zn 1-x Cd x Te) 1-y (In 2 Te 3 ) y film and electrically connected to said semiconductor substrate; a charge transfer or switching element formed in one portion of said semiconductor substrate separate from and adjacent to said region of said second conductivity type, and a gate electrode for entering the charge stored in said region of said second conductivity type into said charge transfer or switching element.
Claim 2
Dependent Claim
213 words
A solid-state image sensor, comprising: a semiconductor substrate having a region of a first conductivity type and one or more regions of a second opposite conductivity type, said regions extending to a major surface of said substrate; an insulating layer formed over said major surface of said semiconductor substrate leaving exposed one portion of said region of said second conductivity type; a first electrode disposed on said insulating layer and extending to overlie and make electrical contact with said region of said second conductivity type; an n-type semiconductor layer overlying said insulating layer and overlying and in electrical contact with said first electrode; a film disposed on said n-type semiconductor layer so as to form a heterojunction therewith and comprising (Zn 1-x Cd x Te) 1-y (In 2 Te 3 ) y , where 0<x<1 and 0<y<0.3; a second electrode formed on said (Zn 1-x Cd x Te) 1-y (In 2 Te 3 ) y film and electrically connected to said semiconductor substrate; a charge transfer or switching element formed in one portion of said semiconductor substrate separate from and adjacent to said region of said second conductivity type, and a gate electrode for entering the charge stored in said region of said second conductivity type into said charge transfer or switching element.
Claim 3
Dependent Claim
45 words
A solid-state image sensor as defined in claim 1, wherein the average composition of said film to a depth of 0.3 microns measured from the second electrode is 1.0>x>0.05, the value of x increasing, as the depth of said film from said second electrode increases.
Claim 4
Dependent Claim
34 words
A solid-state image sensor as set forth in claim 1 wherein said n-type semiconductor layer is made of at least one member selected from the group consisting of ZnO, ZnS, ZnSe, CdS and CdSe.
Claim 5
Dependent Claim
30 words
A solid-state image sensor as defined in claim 1, wherein the major component of said first electrode is a member selected from the group consisting of Mo, Ta and Ti.
Claim 6
Dependent Claim
26 words
A solid-state image sensor as defined in claim 1 wherein said second electrode consists of a material whose work function is in excess of 4.5 eV.
Claim 7
Dependent Claim
41 words
A solid-state image sensor as defined in claim 5 wherein said material for said second electrode is a compound containing at least one member selected from the group consisting of SnO 2 , In 2 O 3 , Au and Pt.
Claim 8
Dependent Claim
21 words
A solid-state image sensor as defined in claim 5 wherein said second electrode is transparent electrode formed by a sputtering method.
Claim 9
Dependent Claim
24 words
A solid-state image sensor as set forth in claim 1, further comprising means for applying a voltage between said substrate and said second electrode.
Claim 10
Dependent Claim
49 words
A solid-state image sensor as set forth in claim 1, wherein said semiconductor substrate having said region of said first conductivity type is of p-type, said region of said second conductivity is of n-type, and said charge transfer element is a bucket brigade element or a charge coupled element.
Claim 11
Dependent Claim
45 words
A solid-state image sensor as set forth in claim 1 further characterized in that said semiconductor substrate having said region of said first conductivity is of p-type, said region of said second conductivity is of n-type, and said switching element comprises a two-dimensional X-Y matrix.
Claim 12
Dependent Claim
99 words
A solid-state image sensor having a p-type semiconductor substrate having a plurality of unit cells, each unit cell comprising at least one n-type impurity region which is in or on said p-type semiconductor substrate and forming a diode portion in conjunction therewith, a first insulating layer disposed over said p-type semiconductor substrate, a first gate electrode extending through said first insulating layer and partly overlying said n-type impurity region, a second insulating layer overlying said first gate electrode, and a first electrode overlying said at least one of said insulating layers and electrically connected to said n-type impurity region.
Claim 13
Dependent Claim
99 words
A solid-state image sensor having a p-type semiconductor substrate having a plurality of unit cells, each unit cell comprising at least one n-type impurity region which is in or on said p-type semiconductor substrate and forming a diode portion in conjunction therewith, a first insulating layer disposed over said p-type semiconductor substrate, a first gate electrode extending through said first insulating layer and partly overlying said n-type impurity region, a second insulating layer overlying said first gate electrode, and a first electrode overlying said at least one of said insulating layers and electrically connected to said n-type impurity region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-02 | 1984-06-02 | 1984-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-02 | 1988-06-02 | 1988-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-02 | 1992-06-02 | 1992-12-02 | $7700.00 | Window Closed / Lapsed |