US4445131A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoconductive image pick-up tube target
Assignee: Hitachi Ltd
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Filing: 1981-11-09
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Granted: 1984-04-24
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Expires: 2001-11-09
Abstract
Abstract A photoconductive image pick-up tube target comprising an N-type semiconductor film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type semiconductor film and containing Se and As and also Te as sensitizers. A layer of said P-type photoconductive film between the N-type semiconductor film and a Te-containing layer of the P-type photoconductive film has an As concentration distribution which is lower on the side of the N-type conductive film and higher on the side of the Te-containing layer.
Inventors
- 👤 Yasuhiko Nonaka
- 👤 Keiichi Shidara
- 👤 Naohiro Goto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:25
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
101 words
In a photoconductive image pick-up tube target comprising an N-type semiconductor film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with said N-type semiconductor film and containing Se and As and also Te as sensitizers the improvement wherein said P-type photoconductive film includes a front layer, a Te-containing layer and a rear layer between said front layer and said Te-containing layer, said front layer being located between said N-type semiconductor film and said rear layer and wherein said rear layer has an As concentration distribution which is greater than the As concentration in said front layer.
Claim 2
Dependent Claim
101 words
In a photoconductive image pick-up tube target comprising an N-type semiconductor film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with said N-type semiconductor film and containing Se and As and also Te as sensitizers the improvement wherein said P-type photoconductive film includes a front layer, a Te-containing layer and a rear layer between said front layer and said Te-containing layer, said front layer being located between said N-type semiconductor film and said rear layer and wherein said rear layer has an As concentration distribution which is greater than the As concentration in said front layer.
Claim 3
Dependent Claim
22 words
A photoconductive image pick-up tube target according to claim 1, wherein said rear layer has a thickness of 50 to 200 Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-24 | 1987-10-24 | 1988-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-24 | 1991-10-24 | 1992-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-24 | 1995-10-24 | 1996-04-24 | $7700.00 | Window Closed / Lapsed |