MOSFET fabrication process with lightly-doped drain using local oxidation step to pattern gate electrode

Claim 2

A MOSFET fabrication process comprising steps of: (a) forming a gate oxide layer on a semiconductor substrate; (b) depositing a polysilicon layer over said gate oxide layer; (c) forming an oxidation-resistant layer over said polysilicon layer; (d) patterning said oxidation-resistant layer to define a gate electrode formation area; (e) performing high-pressure oxidation, thereby oxidizing all of said polysilicon layer not covered by said oxidation-resistant layer and a bird's-beak-shaped portion of the polysilicon layer covered by the oxidation-resistant layer, thus leaving, under said oxidation-resistant layer, a polysilicon gate electrode with tapered sides; (f) removing all oxidized portions of said polysilicon layer; (g) implanting first impurity ions at a first accelerating energy and first dose, with said oxidation-resistant layer as a mask; (h) removing said oxidation-resistant layer, and; (i) implanting second impurity ions at a second accelerating energy higher than said first accelerating energy and second dose lower than said first dose.

Claim 3

The process of claim 1, wherein step (e) is performed at a pressure of at least about seven atmospheres.

Claim 4

The process of claim 1, wherein step (e) is performed in a wet oxygen atmosphere at a temperature of not less than 950° C.

Claim 5

The process of claim 1, wherein said oxidation-resistant layer comprises Si 3 N 4 .

Claim 6

The process of claim 1, wherein said oxidation-resistant layer is sufficiently thick that oxidation in step (e) raises edges of said oxidation-resistant layer by an angle not exceeding 10°.

Claim 7

The process of claim 1, wherein said first impurity ions are phosphorus ions and said second impurity ions are arsenic ions.

Claim 8

A MOSFET fabrication process comprising steps of: (a) forming a gate oxide layer on a semiconductor substrate; (b) depositing a polysilicon layer over said gate oxide layer; (c) forming an oxidation-resistant layer over said polysilicon layer; (d) patterning said oxidation-resistant layer to define a gate electrode formation area; (e) performing high-pressure oxidation, thereby oxidizing an upper part of said polysilicon layer not covered by said oxidation-resistant layer and a bird's-beak-shaped portion of the polysilicon layer covered by the oxidation-resistant layer, thus leaving, under said oxidation-resistant layer, a polysilicon gate electrode with tapered sides surrounded by a remaining polysilicon layer; (f) removing the oxidized upper part of said polysilicon layer; (g) implanting first impurity ions at a first accelerating energy and first dose with said oxidation-resistant layer as a mask; (h) depositing a layer of oxide over all exposed surfaces; (i) etching said layer of oxide by reactive ion etching with said oxidation-resistant layer as a mask, thus leaving sidewalls adjacent to said tapered sides of said polysilicon gate electrode, also leaving said remaining polysilicon layer and said gate oxide layer intact below said sidewalls; and (j) implanting second impurity ions at a second accelerating energy lower than said first accelerating energy and second dose higher than said first dose with said oxidation-resistant layer and said sidewalls as a mask.

Claim 9

A MOSFET fabrication process comprising steps of: (a) forming a gate oxide layer on a semiconductor substrate; (b) depositing a polysilicon layer over said gate oxide layer; (c) forming an oxidation-resistant layer over said polysilicon layer; (d) patterning said oxidation-resistant layer to define a gate electrode formation area; (e) performing high-pressure oxidation, thereby oxidizing an upper part of said polysilicon layer not covered by said oxidation-resistant layer and a bird's-beak-shaped portion of the polysilicon layer covered by the oxidation-resistant layer, thus leaving, under said oxidation-resistant layer, a polysilicon gate electrode with tapered sides surrounded by a remaining polysilicon layer; (f) removing the oxidized upper part of said polysilicon layer; (g) implanting first impurity ions at a first accelerating energy and first dose with said oxidation-resistant layer as a mask; (h) depositing a layer of oxide over all exposed surfaces; (i) etching said layer of oxide by reactive ion etching with said oxidation-resistant layer as a mask, thus leaving sidewalls adjacent to said tapered sides of said polysilicon gate electrode, also leaving said remaining polysilicon layer and said gate oxide layer intact below said sidewalls; and (j) implanting second impurity ions at a second accelerating energy lower than said first accelerating energy and second dose higher than said first dose with said oxidation-resistant layer and said sidewalls as a mask.

Claim 10

The process of claim 7, wherein step (e) is performed at a pressure of at least about seven atmospheres.

Claim 11

The process of claim 7, wherein step (e) is performed in a wet oxygen atmosphere at a temperature of not less than 1030° C.

Claim 12

The process of claim 7, wherein said first impurity ions are implanted partially below said tapered sides of said polysilicon gate electrode.

Claim 13

The process of claim 7, wherein said oxidation-resistant layer comprises Si 3 N 4 .

Claim 14

The process of claim 7, wherein said oxidation-resistant layer is sufficiently thin that oxidation in step (e) raises edges of said oxidation-resistant layer by an angle of at least about 40°.

Claim 15

The process of claim 7, wherein said first impurity ions are arsenic ions or phosphorus ions and said second impurity ions are arsenic ions.