Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent polycrystalline silicon from remaining behind by making a peripheral edge part of a silicon dioxide layer a sloping surface in case where the polycrystalline silicon layer deposited on the silicon dioxide is removed selective by means of a reactive ion etching method. CONSTITUTION:An end part of a silicon dioxide layer 4 that becomes a mask is formed into a sloping surface. When reactive ion etching is executed for the silicon layer 4 and a polycrystalline silicon layer 2, said two layers 4, 2 are to have a continuous sloping surface. Then, such a structure is obtained that a side surface of the silicon layer 2 is oxidized and the surface of the silicon layer 2 is coated with the silicon layer 4. Hereby, it is permitted to prevent the silicon layer 2 from remaining.

Inventors

• 👤 Masao Kanazawa

Bibliographic Details