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US5098884A
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Method for producing a superconducting pattern by doping impurities
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-03-05
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Granted: 1992-03-24
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Expires: 2010-03-05
Abstract
Abstract A superconducting oxide ceramic pattern is described. The pattern is comprised of a high Tc superconducting region and a low Tc superconducting region which exhibits a resistivity at the liquid nitrogen temperature while the high Tc region is superconductive at that temperature. The low Tc region is doped with impurity such as Si and then subjected to thermal treatment to oxidizing the impurity.
Inventors
- 👤 Shumpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:17
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0296; H10N60/0381; H10N60/0408; H10N60/0884; H10N60/0912; H10N60/0941; H10N60/10; H10N60/12; H10N60/124; H10N60/80; H10N60/85; H10N60/855; H10N60/857; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703; Y10S505/706; Y10S505/725; Y10S505/73; Y10S505/742; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24926
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
104 words
A method of producing a superconducting oxide ceramic pattern comprising: forming a ceramic film on a surface of a substrate; and converting said ceramic film to a ceramic superconductive film; doping a portion of said ceramic film with an impurity by using a mask where the doping can occur either before or after the conversion of the ceramic film to the ceramic superconducting film, said impurity comprising one or more selected from the group consisting of Si, Al, Mg, Ga, Ge, Ti, Zr, Fe, Ni, Co, B and P; so that the TcO of the doped portion is lowered by said step of doping.
Claim 2
Independent Claim
104 words
A method of producing a superconducting oxide ceramic pattern comprising: forming a ceramic film on a surface of a substrate; and converting said ceramic film to a ceramic superconductive film; doping a portion of said ceramic film with an impurity by using a mask where the doping can occur either before or after the conversion of the ceramic film to the ceramic superconducting film, said impurity comprising one or more selected from the group consisting of Si, Al, Mg, Ga, Ge, Ti, Zr, Fe, Ni, Co, B and P; so that the TcO of the doped portion is lowered by said step of doping.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the doping level is selected higher than the initial corresponding impurity level of said ceramic film.
Claim 4
Dependent Claim
28 words
The method of claim 2 wherein the formation of said ceramic film is carried out so that said initial impurity level is limited not higher than 100 ppm.
Claim 5
Dependent Claim
19 words
The method of claim 1 further comprising the step of thermal annealing in an oxidizing atmosphere after the doping.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein the formation of said ceramic film is implemented by sputtering.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the formation of said ceramic film is implemented by printing, MBE growth of vapor phase method.
Claim 8
Independent Claim
102 words
A method of producing a superconducting oxide ceramic pattern comprising: forming a ceramic film on a surface of a substrate; and converting said ceramic film to a ceramic superconductive film; doping a portion of said ceramic film with an impurity by using a mask where the doping can occur either before or after the conversion of the ceramic film to the ceramic superconducting film, said impurity comprising one or more selected from the group consisting of Si, Al, Mg, Ga, Ge, Ti, Zr, Fe, Ni, Co, B and P; so that the superconductivity of the doped portion is destroyed by said impurities.
Claim 9
Independent Claim
102 words
A method of producing a superconducting oxide ceramic pattern comprising: forming a ceramic film on a surface of a substrate; and converting said ceramic film to a ceramic superconductive film; doping a portion of said ceramic film with an impurity by using a mask where the doping can occur either before or after the conversion of the ceramic film to the ceramic superconducting film, said impurity comprising one or more selected from the group consisting of Si, Al, Mg, Ga, Ge, Ti, Zr, Fe, Ni, Co, B and P; so that the superconductivity of the doped portion is destroyed by said impurities.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
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