US4732867A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming alignment marks in sapphire
Assignee: General Electric Co
•
Filing: 1986-11-03
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Granted: 1988-03-22
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Expires: 2006-11-03
Abstract
Abstract Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050° to 1200° C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.
Inventors
- 👤 George L. Schnable
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:14
CPC Classifications
H; H10; H10W; H10W46/00; H10W46/501; Y; Y10; Y10S; Y10S148/00; Y10S148/083; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
35 words
A process for producing indicia in a sapphire substrate comprising ion implanting a portion of the substrate with a dosage of silicon ions sufficient to contrast the implanted portion from the remainder of the substrate.
Claim 2
Dependent Claim
35 words
A process for producing indicia in a sapphire substrate comprising ion implanting a portion of the substrate with a dosage of silicon ions sufficient to contrast the implanted portion from the remainder of the substrate.
Claim 3
Dependent Claim
22 words
A process in accordance with claim 1, wherein the dosage of silicon ions is at least about 1×10 16 ions/cm 2 .
Claim 4
Dependent Claim
21 words
A process in accordance with claim 1, wherein the implant is annealed at a temperature between about 1050° and 1200° C.
Claim 5
Dependent Claim
26 words
A process in accordance with claim 2, wherein the dosage of silicon ions is from about 1×10 17 to 2×10 17 ions per cm 2 .
Claim 6
Dependent Claim
15 words
A process in accordance with claim 3, wherein the implant is annealed at 1100° C.
Claim 7
Dependent Claim
16 words
A process in accordance with claim 3, wherein the implant is annealed in an oxygen atmosphere.
Claim 8
Dependent Claim
16 words
A process in accordance with claim 3, wherein the implant is annealed in an argon atmosphere.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-22 | 1991-09-21 | 1992-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-22 | 1995-09-21 | 1996-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-22 | 1999-09-21 | 2000-03-22 | $7700.00 | Window Closed / Lapsed |