US4395467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transparent conductive film having areas of high and low resistivity
Assignee: Intersil Corp
•
Filing: 1981-12-30
•
Granted: 1983-07-26
•
Expires: 2001-12-30
Abstract
Abstract A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.
Inventors
- 👤 John L. Vossen, Jr.
- 👤 Joseph Zelez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:07
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439; C; C04; C04B; C04B41/00; C04B41/0027; C04B41/80; H; H01; H01B; H01B1/00; H01B1/06; H01B1/08; H10; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/128
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
59 words
A method of producing areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide comprising ion implanting protrons into a portion of said film and annealing the film in a reducing gas at a temperature above about 700° C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
Claim 2
Independent Claim
59 words
A method of producing areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide comprising ion implanting protrons into a portion of said film and annealing the film in a reducing gas at a temperature above about 700° C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
Claim 3
Dependent Claim
27 words
A method in accordance with claim 1, wherein the film is implanted with a dose of from about 10 10 to about 10 16 protons/cm 2 .
Claim 4
Dependent Claim
23 words
A method in accordance with claim 1, wherein the film is annealed at a temperature from about 700° C. and about 850° C.
Claim 5
Dependent Claim
19 words
A method in accordance with claim 1, wherein the film is annealed at a temperature of about 750° C.
Claim 6
Dependent Claim
23 words
A method in accordance with claim 1, where the film is annealed in a reducing gas atmosphere of hydrogen and an inert gas.
Claim 7
Dependent Claim
21 words
A method in accordance with claim 5, wherein said atmosphere is hydrogen and nitrogen in a partial pressure ratio of 1:9.
Claim 8
Independent Claim
68 words
A method of forming a transparent conductive layer having areas of high and low resistivity on a substrate comprising depositing a film of indium oxide and zirconium oxide on said substrate, ion implanting protons into a portion of said film and annealing the film in reducing gas at a temperature above about 700° C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
Claim 9
Independent Claim
68 words
A method of forming a transparent conductive layer having areas of high and low resistivity on a substrate comprising depositing a film of indium oxide and zirconium oxide on said substrate, ion implanting protons into a portion of said film and annealing the film in reducing gas at a temperature above about 700° C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
Claim 10
Dependent Claim
11 words
A structure produced in accordance with the method of claim 7.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-25 | 1987-01-24 | 1987-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-25 | 1991-01-24 | 1991-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-25 | 1995-01-24 | 1995-07-26 | $7700.00 | Window Closed / Lapsed |