US4466839A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Implantation of an insulative layer
Assignee: Siemens AG
•
Filing: 1982-09-17
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Granted: 1984-08-21
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Expires: 2002-09-17
Abstract
Abstract Method for preparing electrically conductive layers on or in insulating layers, characterized by the feature that the conductivity of at least part of the insulating layer is increased by ion implantation.
Inventors
- 👤 Joachim Dathe
- 👤 Walter Holtschmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/115; H10D1/00; H10D1/40; H10D1/47; H10P; H10P30/00; H10P30/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
98 words
Method for fabricating semiconductor components in which the semiconductor body of the semiconductor component is at least partially covered with a layer of inorganic insulation to generate an electrically conductive layer between two spaced metal contacts in contact with the insulating layer, which comprises subjecting the insulating layer to ion implantation to implant an electrically conductive layer within the inorganic insulation remote from the surface of the semiconductor body beneath the inorganic insulation, and extending the ion implantation over an area of the inorganic insulation to cause the electrically conductive layer to contact said two spaced metal contacts.
Claim 2
Dependent Claim
98 words
Method for fabricating semiconductor components in which the semiconductor body of the semiconductor component is at least partially covered with a layer of inorganic insulation to generate an electrically conductive layer between two spaced metal contacts in contact with the insulating layer, which comprises subjecting the insulating layer to ion implantation to implant an electrically conductive layer within the inorganic insulation remote from the surface of the semiconductor body beneath the inorganic insulation, and extending the ion implantation over an area of the inorganic insulation to cause the electrically conductive layer to contact said two spaced metal contacts.
Claim 3
Dependent Claim
19 words
Method according to claim 1, wherein the electrically conductive layer is at the top surface of the insulating layer.
Claim 4
Dependent Claim
49 words
Method according to claim 1, wherein the semiconductor component is covered with two layers of insulation with the outer layer of insulation furthest from the surface of the semiconductor component being a layer of inorganic insulation on which is generated the electrically conductive layer between two spaced metal contacts.
Claim 5
Dependent Claim
27 words
Method according to claim 1, wherein the ion implantation is carried out by means of ions selected from the group consisting of metal ions and semiconductor ions.
Claim 6
Dependent Claim
17 words
Method according to claim 1, wherein the ion implantation is carried out by means of silicon ions.
Claim 7
Dependent Claim
28 words
Method according to claim 1, wherein the ion implantation is carried out with an implantation dose of from 1×10 14 cm -2 to 1.10 18 cm -2 .
Claim 8
Dependent Claim
17 words
Method according to claim 1, wherein the insulating layer is silicon nitride (Si 3 N 4 ).
Claim 9
Dependent Claim
16 words
Method according to claim 1, wherein the insulating layer is annealed subsequent to the ion implantation.
Claim 10
Dependent Claim
15 words
Method according to claim 3, wherein said two layers of insulation have different chemical compositions.
Claim 11
Dependent Claim
52 words
Method according to claim 3, wherein the outer insulating layer is a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), phosphorous glass (SiO 2 .P 2 O 5 ), boron glass (SiO 2 .B 2 O 3 ) and silicon nitride (Si 3 N 4 ).
Claim 12
Dependent Claim
18 words
Method according to claim 3, wherein the outer insulating layer is silicon nitride (Si 3 N 4 ).
Claim 13
Dependent Claim
28 words
Method according to claim 11, wherein the inner insulating layer between the outer insulating layer and the surface of the semiconductor component is silicon dioxide (SiO 2 ).
Claim 14
Dependent Claim
16 words
Method according to claim 6, wherein the implantation dose is about 1.10 17 cm -2 .
Claim 15
Dependent Claim
28 words
Method according to claim 5, wherein the ion implantation is carried out with an implantation dose of from 1×10 14 cm -2 to 1.10 18 cm -2 .
Claim 16
Dependent Claim
16 words
Method according to claim 14, wherein the implantation dose is about 1.10 17 cm -2 .
Claim 17
Dependent Claim
22 words
Method according to claim 1 or 14, wherein the ion implantation is carried out with an accelerating voltage of about 30 keV.
Claim 18
Dependent Claim
59 words
Method according to claims 1, 5, 6, or 14, wherein the insulating layer is a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), phosphorous glass (SiO 2 .P 2 O 5 ), boron glass (SiO 2 .B 2 O 3 )and silicon nitride (Si 3 N 4 ).
Claim 19
Dependent Claim
22 words
Method according to claim 1 or 14, wherein the layer thickness of the insulating layer is about 300 Å to 3000 Å.
Claim 20
Dependent Claim
19 words
Method according to claim 1 or 14, wherein the layer thickness of the insulating layer is about 1000 Å.
Claim 21
Dependent Claim
35 words
Method according to 1, 3, or 14, wherein the ion implantation of the insulating layer is carried out to produce a maximum dose at a distance of about 200 Å below the outer insulating surface.
Claim 22
Dependent Claim
35 words
Method according to 1, 3, or 14, wherein the ion implantation of the insulating layer is carried out to produce a maximum dose at a distance of about 200 Å below the outer insulating surface.
Claim 23
Dependent Claim
24 words
Method according to claim 8, wherein the annealing is carried out in an atmosphere selected from the group consisting of nitrogen and hydrogen atmosphere.
Claim 24
Dependent Claim
19 words
Method according to claim 8, wherein the annealing is carried out at temperatures of 320° C. to 650° C.
Claim 25
Dependent Claim
19 words
Method according to claim 8, wherein the annealing is carried out at temperatures of 320° C. to 420° C.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1987-08-21 | 1988-02-20 | 1988-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-21 | 1992-02-20 | 1992-08-21 | $3760.00 | Window Closed / Lapsed |
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