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US5093704A
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US
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Semiconductor device having a semiconductor region in which a band gap being continuously graded
Assignee: Canon Inc
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Filing: 1989-09-28
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Granted: 1992-03-03
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Expires: 2009-09-28
Abstract
Abstract An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon atom, a band gap adjusting atom and a localized level reducing atom and having a region in which a band gap being continuously graded at least one position other than junction position and only one of a conduction band and a valence band being continuously graded. It gives a significant improvement in both the frequency characteristic and the photoresponse.
Inventors
- 👤 Keishi Saito
- 👤 Yasushi Fujioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F30/24; H10F30/245; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10P; H10P95/00; H10P95/90; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
144 words
A semiconductor device having a transistor comprising: (a) a collector region having a first conductivity type; (b) an emitter region having a first conductivity type; and (c) a base region having a second conductivity type opposite to said first conductivity type; wherein (i) each of said collector and emitter regions comprises a non-single-crystal semiconductor material containing silicon atoms as the main constituent; (ii) said base region comprises a non-single-crystal semiconductor material containing silicon atoms as the main constituent, band gap adjusting atoms and from 1 to 60 atomic % of hydrogen or halogen atoms as localized level reducing atoms; (iii) said base region having a band gap grading region in which a band gap is continuously graded; and (iv) said band gap grading semiconductor region having a conduction band and valence band, wherein only one of said conduction and valence bands is continuously graded.
Claim 2
Dependent Claim
144 words
A semiconductor device having a transistor comprising: (a) a collector region having a first conductivity type; (b) an emitter region having a first conductivity type; and (c) a base region having a second conductivity type opposite to said first conductivity type; wherein (i) each of said collector and emitter regions comprises a non-single-crystal semiconductor material containing silicon atoms as the main constituent; (ii) said base region comprises a non-single-crystal semiconductor material containing silicon atoms as the main constituent, band gap adjusting atoms and from 1 to 60 atomic % of hydrogen or halogen atoms as localized level reducing atoms; (iii) said base region having a band gap grading region in which a band gap is continuously graded; and (iv) said band gap grading semiconductor region having a conduction band and valence band, wherein only one of said conduction and valence bands is continuously graded.
Claim 3
Dependent Claim
146 words
A semiconductor device comprising a band gap grading semiconductor region between a first semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent, and a second semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent; said band gap grading semiconductor region forming a junction with said first semiconductor region and with said second semiconductor region; said band gap grading semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent, band gap adjusting atoms and from 1 to 60 atomic % of hydrogen or halogen atoms as localized level reducing atoms; said band gap grading semiconductor region having a region in which a band gap is continuously graded; and said band gap grading semiconductor region having a conduction band and valence band wherein only one of said conduction and valence bands is continuously graded.
Claim 4
Dependent Claim
146 words
A semiconductor device comprising a band gap grading semiconductor region between a first semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent, and a second semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent; said band gap grading semiconductor region forming a junction with said first semiconductor region and with said second semiconductor region; said band gap grading semiconductor region comprising a non-single-crystal semiconductor material containing silicon atoms as the main constituent, band gap adjusting atoms and from 1 to 60 atomic % of hydrogen or halogen atoms as localized level reducing atoms; said band gap grading semiconductor region having a region in which a band gap is continuously graded; and said band gap grading semiconductor region having a conduction band and valence band wherein only one of said conduction and valence bands is continuously graded.
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| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
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